Method and apparatus for the fabrication of alloyed transistors

Claim 1

A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS (1) COATING AT LEAST A PORTION OF AT LEAST ONE SURFACE OF A PERFORATED BASE TAB WITH A SUITABLE SOLDER, (2) STACKING AND POSITIONING ONE FLAT MON-PLANAR SURFACE OF A WAFER COMPRISED OF A SEMICONDUCTIVE MATERIAL UPON AT LEAST THAT PORTION OF THE BASE TAB COATED WITH SOLDER, (3) DISPOSING A FIRST DOPING ALLOY PELLET CENTRALLY UPON THE OTHER FLAT MON-PLANAR SURFACE OF THE WAFER, (4) HEATING THE STACK, THEREBY MELTING BOTH THE SOLDER DISPOSED ON THE BASE TAB AND THE DOPING ALLOY PELLET TO PRODUCE A P-N JUNCTION, (5) COOLING THE STACK TO FORM AN INTEGRAL BODY, (6) ROTATING THE INTEGRAL BODY 180*, (7) CENTRALLY DISPOSING A SECOND DOPING ALLOY PELLET UPON THE OTHER SURFACE OF THE WAFER, (8) HEATING THE PELLET AND WAFER TO A TEMPERATURE SUFFICIENT TO ALLOY THE DOPING ALLOY PELLET TO THE WAFER, (9) COOLING THE PELLET AND WAFER TO FORM AN INTEGRAL UNIT, (10) HEATING THE DOPING ALLOY PELLET TO A TEMPERATURE SUFFICIENT TO SOFTEN IT BUT NOT SUFFICIENT TO EFFECT THE PELLET TO WAFER JUNCTION, (11) DISPOSING A CONTACT WITHIN THE PELLET COAXIALLY WITH THE PELLET-WAFER JUNCTION, (12) ROTATING THE INTEGRAL STACK 180*, (13) HEATING THE FIRST DOPING ALLOY PELLET TO A TEMPERATURE SUFFICIENT TO SOFTEN IT BUT NOT SUFFICIENT TO EFFECT THE PELLET-WAFER JUNCTION, (14) DISPOSING A CONTACT WITHIN THE PELLET COAXIALLY WITH THE PELLET-WAFER JUNCTION, AND (15) COOLING THE PELLET TO BOND THE CONTACT IN POSITION.

Claim 2

A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS (1) COATING AT LEAST A PORTION OF AT LEAST ONE SURFACE OF A PERFORATED BASE TAB WITH A SUITABLE SOLDER, (2) STACKING AND POSITIONING ONE FLAT MON-PLANAR SURFACE OF A WAFER COMPRISED OF A SEMICONDUCTIVE MATERIAL UPON AT LEAST THAT PORTION OF THE BASE TAB COATED WITH SOLDER, (3) DISPOSING A FIRST DOPING ALLOY PELLET CENTRALLY UPON THE OTHER FLAT MON-PLANAR SURFACE OF THE WAFER, (4) HEATING THE STACK, THEREBY MELTING BOTH THE SOLDER DISPOSED ON THE BASE TAB AND THE DOPING ALLOY PELLET TO PRODUCE A P-N JUNCTION, (5) COOLING THE STACK TO FORM AN INTEGRAL BODY, (6) ROTATING THE INTEGRAL BODY 180*, (7) CENTRALLY DISPOSING A SECOND DOPING ALLOY PELLET UPON THE OTHER SURFACE OF THE WAFER, (8) HEATING THE PELLET AND WAFER TO A TEMPERATURE SUFFICIENT TO ALLOY THE DOPING ALLOY PELLET TO THE WAFER, (9) COOLING THE PELLET AND WAFER TO FORM AN INTEGRAL UNIT, (10) HEATING THE DOPING ALLOY PELLET TO A TEMPERATURE SUFFICIENT TO SOFTEN IT BUT NOT SUFFICIENT TO EFFECT THE PELLET TO WAFER JUNCTION, (11) DISPOSING A CONTACT WITHIN THE PELLET COAXIALLY WITH THE PELLET-WAFER JUNCTION, (12) ROTATING THE INTEGRAL STACK 180*, (13) HEATING THE FIRST DOPING ALLOY PELLET TO A TEMPERATURE SUFFICIENT TO SOFTEN IT BUT NOT SUFFICIENT TO EFFECT THE PELLET-WAFER JUNCTION, (14) DISPOSING A CONTACT WITHIN THE PELLET COAXIALLY WITH THE PELLET-WAFER JUNCTION, AND (15) COOLING THE PELLET TO BOND THE CONTACT IN POSITION.