Semi-conductor devices

Claim 1

A METHOD OF MAKING A TRANSISTOR WHICH COMPRISES THE STEPS OF LOCATING IN A GRAPHITE JIG A FIRST PELLET OF INDIUM ON A FIRST SURFACE OF A CRYSTAL OF N-TYPE GERMANIUM CUT IN THE 1.1.1. PLANE, RAISING THE TEMPERATURE OF THE ASSEMBLY IN THE JIG IN AN ATMOSPHERE OF OXYGEN FREE HYDROGEN AT A STEADY RATE IN A TIME INTERVAL OF APPROXIMATELY 15 MINUTES TO A FIRST ELEVATED TEMPERATURE BETWEEN 340*C. AND 380*C., MAINTAINING SAID FIRST ELEVATED TEMPERATURE FOR A PERIOD OF APPROXIMATELY 10 MINUTES, COOLING TO ROOM TEMPERATURE, LOCATING IN THE JIG A SECOND PELLET OF INDIUM ON A SECOND SURFACE OF THE CRYSTAL OPPOSITE SAID FIRST SURFACE, SAID FIRST AND SECOND PELLETS BEING SUBSTANTIALLY OPPOSITE ONE ANOTHER, AGAIN RAISING THE TEMPERATURE OF THE ASSEMBLY IN THE JIG IN SAID ATMOSPHERE AT SAID STEADY RATE TO SAID FIRST ELEVATED TEMPERATURE, MAINTAINING SAID FIRST ELEVATED TEMPERATURE FOR A PERIOD OF APPROXIMATELY 10 MINUTES, FURTHER RAISING THE ASSEMBLY IN THE JIG IN SAID ATMOSPHERE AT A STEADY RATE IN A TIME INTERVAL OF APPROXIMATELY 15 MINUTES TO A SECOND ELEVATED TEMPERATURE BETWEEN 475*C. AND 590*C., MAINTAINING SAID SECOND ELEVATED TEMPERATURE FOR A PERIOD OF APPROXIMATELY 10 MINUTES, COOLING THE ASSEMBLY IN SAID ATMOSPHERE AT A RATE OF APPROXIMATELY 20*C. PER MINUTE FROM SAID SECOND ELEVATED TEMPERATURE DOWN TO AT LEAST SAID FIRST ELEVATED TEMPERATURE, FURTHER COOLING SAID ASSEMBLY DOWN TO ROOM TEMPERATURE, PLACING A RING OF GOLD-PLATED AND ANTIMONY FLASH-PLATED MOLYBDENUM WIRE ON ONE OF SAID SURFACES OF THE CRYSTAL AROUND THE INDIUM PELLET THEREON, PASSING ALTERNATING CURRENT AROUND TWO HALVES OF SAID RING IN PARALLEL UNTIL SAID GOLD-PLATING FLOWS AND FORMS A UNION WITH SAID ONE SURFACE OF THE CRYSTAL, PLACING THE ENDS OF TWO PLATINUM WIRES IN CONTACT RESPECTIVELY WITH SAID TWO INDIUM PELLETS, MELTING SAID INDIUM PELLETS BY THE PASSAGE OF ALTERNATING CURRENT BETWEEN SAID WIRES, INSERTING THE WIRES RESPECTIVELY INTO THE MELTED PELLETS, APPLYING A SUITABLE FLUX AT THE JUNCTIONS BETWEEN THE WIRES AND THE PELLETS AND REMELTING SAID INDIUM PELLETS BY THE PASSAGE OF ALTERNATING CURRENT BETWEEN THE WIRES UNTIL THE WIRES ARE WETTED BY THE INDIUM OF THE PELLETS.

Claim 2

A METHOD OF MAKING A TRANSISTOR WHICH COMPRISES THE STEPS OF LOCATING IN A GRAPHITE JIG A FIRST PELLET OF INDIUM ON A FIRST SURFACE OF A CRYSTAL OF N-TYPE GERMANIUM CUT IN THE 1.1.1. PLANE, RAISING THE TEMPERATURE OF THE ASSEMBLY IN THE JIG IN AN ATMOSPHERE OF OXYGEN FREE HYDROGEN AT A STEADY RATE IN A TIME INTERVAL OF APPROXIMATELY 15 MINUTES TO A FIRST ELEVATED TEMPERATURE BETWEEN 340*C. AND 380*C., MAINTAINING SAID FIRST ELEVATED TEMPERATURE FOR A PERIOD OF APPROXIMATELY 10 MINUTES, COOLING TO ROOM TEMPERATURE, LOCATING IN THE JIG A SECOND PELLET OF INDIUM ON A SECOND SURFACE OF THE CRYSTAL OPPOSITE SAID FIRST SURFACE, SAID FIRST AND SECOND PELLETS BEING SUBSTANTIALLY OPPOSITE ONE ANOTHER, AGAIN RAISING THE TEMPERATURE OF THE ASSEMBLY IN THE JIG IN SAID ATMOSPHERE AT SAID STEADY RATE TO SAID FIRST ELEVATED TEMPERATURE, MAINTAINING SAID FIRST ELEVATED TEMPERATURE FOR A PERIOD OF APPROXIMATELY 10 MINUTES, FURTHER RAISING THE ASSEMBLY IN THE JIG IN SAID ATMOSPHERE AT A STEADY RATE IN A TIME INTERVAL OF APPROXIMATELY 15 MINUTES TO A SECOND ELEVATED TEMPERATURE BETWEEN 475*C. AND 590*C., MAINTAINING SAID SECOND ELEVATED TEMPERATURE FOR A PERIOD OF APPROXIMATELY 10 MINUTES, COOLING THE ASSEMBLY IN SAID ATMOSPHERE AT A RATE OF APPROXIMATELY 20*C. PER MINUTE FROM SAID SECOND ELEVATED TEMPERATURE DOWN TO AT LEAST SAID FIRST ELEVATED TEMPERATURE, FURTHER COOLING SAID ASSEMBLY DOWN TO ROOM TEMPERATURE, PLACING A RING OF GOLD-PLATED AND ANTIMONY FLASH-PLATED MOLYBDENUM WIRE ON ONE OF SAID SURFACES OF THE CRYSTAL AROUND THE INDIUM PELLET THEREON, PASSING ALTERNATING CURRENT AROUND TWO HALVES OF SAID RING IN PARALLEL UNTIL SAID GOLD-PLATING FLOWS AND FORMS A UNION WITH SAID ONE SURFACE OF THE CRYSTAL, PLACING THE ENDS OF TWO PLATINUM WIRES IN CONTACT RESPECTIVELY WITH SAID TWO INDIUM PELLETS, MELTING SAID INDIUM PELLETS BY THE PASSAGE OF ALTERNATING CURRENT BETWEEN SAID WIRES, INSERTING THE WIRES RESPECTIVELY INTO THE MELTED PELLETS, APPLYING A SUITABLE FLUX AT THE JUNCTIONS BETWEEN THE WIRES AND THE PELLETS AND REMELTING SAID INDIUM PELLETS BY THE PASSAGE OF ALTERNATING CURRENT BETWEEN THE WIRES UNTIL THE WIRES ARE WETTED BY THE INDIUM OF THE PELLETS.