US3065115A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating transistors having desired current-transfer ratios
Assignee: Texas Instruments Inc
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Filing: 1959-12-29
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Granted: 1962-11-20
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Expires: 1979-12-29
Abstract
No abstract record available.
Inventors
- 👤 Jr Chester C Allen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:25
CPC Classifications
H; H10; H10P; H10P32/00; C; C30; C30B; C30B15/00; C30B15/02; C30B15/04; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/074; Y10S148/107
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
108 words
A METHOD FOR FABRICATING TRANSISTOR BARS HAVING DIFFERENT CURRENT-TRANSFER RATIOS WHILE MAINTAINING THE OTHER ELECTRICAL CHARACTERISTICS CONSTANT WHICH COMPRISES GROWING SEPARATE FIRST CRYSTAL SECTIONS FROM SEPARATE MELTS OFF A FIRST-TYPE CONDUCTIVITY, ADDING TO EACH OF SAID MELTS A DIFFERENT MIXTURE OF AT LEAST TWO IMPURITY MATERIALS OF A SECOND-TYPE CONDUCTIVITY, HAVING DIFFERENT DIFFUSION RATES WHICH ARE BOTH GREATER THAN THAT OF THE IMPURITY MATERIAL PRODUCING SAID FIRST-TYPE CONDUCTIVITY, IN RATIOS TO VARIBLY DIFFUSE INTO SAID FIRST CRYSTAL SECTIONS TO FORM VARYING WIDTH BASE REGIONS WHILE MAINTAINING MAXIMUM EXCESS IMPURITY CONCENTRATION IN SAID BASES CONSTANT, AND GROWING ON EACH OF SAID CRYSTALS A THIRD REGION OF SAID FIRSTTYPE CONDUCTIVITY.
Claim 2
Independent Claim
108 words
A METHOD FOR FABRICATING TRANSISTOR BARS HAVING DIFFERENT CURRENT-TRANSFER RATIOS WHILE MAINTAINING THE OTHER ELECTRICAL CHARACTERISTICS CONSTANT WHICH COMPRISES GROWING SEPARATE FIRST CRYSTAL SECTIONS FROM SEPARATE MELTS OFF A FIRST-TYPE CONDUCTIVITY, ADDING TO EACH OF SAID MELTS A DIFFERENT MIXTURE OF AT LEAST TWO IMPURITY MATERIALS OF A SECOND-TYPE CONDUCTIVITY, HAVING DIFFERENT DIFFUSION RATES WHICH ARE BOTH GREATER THAN THAT OF THE IMPURITY MATERIAL PRODUCING SAID FIRST-TYPE CONDUCTIVITY, IN RATIOS TO VARIBLY DIFFUSE INTO SAID FIRST CRYSTAL SECTIONS TO FORM VARYING WIDTH BASE REGIONS WHILE MAINTAINING MAXIMUM EXCESS IMPURITY CONCENTRATION IN SAID BASES CONSTANT, AND GROWING ON EACH OF SAID CRYSTALS A THIRD REGION OF SAID FIRSTTYPE CONDUCTIVITY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-11-19 | 1966-05-21 | 1966-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-11-19 | 1970-05-21 | 1970-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-11-19 | 1974-05-21 | 1974-11-20 | $7700.00 | Window Closed / Lapsed |