Configuration for semiconductor devices

Claim 1

A SEMICONDUCTOR DEVICE COMPRISING IN COMBINATION, A FIRST SEMICONDUCTOR ELEMENT OF A FIRST-TYPE OF SEMICONDUCTIVITY, SAID FIRST ELEMENT HAVING TWO SUBSTANTIALLY FLAT PARALLEL SURFACES, A SINGLE SECOND ELEMENT OF A SECOND TYPE SEMICONDUCTIVITY, WHICH SERVES AS A COLLECTOR, DISPOSED UPON AND COEXTENSIVE WITH ONE OF SAID SURFACES OF SAID FIRST SEMICONDUCTOR ELEMENT, A SEMICONDUCTOR TRANSITION REGION BETWEEN SAID FIRST AND SECOND ELEMENT, A SINGLE THIRD ELEMENT HAVING THE SEMICONDUCTIVITY AS SAID SECOND ELEMENT AND SERVING AS AN EMITTER DISPOSED UPON THE SECOND SURFACE OF THE FIRST SEMICONDUCTOR ELEMENT ADJACENT TO THE PERIPHERY OF THE SECOND SURFACE OFF THE FIRST SEMICONDUCTOR ELEMENT, A SECOND SEMICONDUCTOR TRANSITION REGION BETWEEN SAID THIRD AND SAID FIRST ELEMENT, AND A SINGLE BASE CONTACT DISPOSED CENTRALLY UPON SAID SECOND SURFACE OF SAID FIRST SEMICONDUCTOR ELEMENT AND ENTIRELY WITHIN THE AREA ENCLOSED BY THE SINGLE EMITTER ELEMENT.