Patent US3063876A successfully refreshed from Google Patents.
US3063876A
Expired / Lapsed
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Preparation of junctions in silicon carbide members
Assignee: Westinghouse Electric Corp
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Filing: 1959-07-10
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Granted: 1962-11-13
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Expires: 1979-07-10
Abstract
No abstract record available.
Inventors
- 👤 May Charlotte Z Le
- 👤 Chang Hung Chi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:18
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/051; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0115; H10D8/043; Y; Y10; Y10S; Y10S148/00; Y10S148/107; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
105 words
IN THE PROCESS OF FORMING A SEMICONDUCTOR TRANSITION REGION WITHIN A SINGLE CRYSTAL SILICON CARBIDE MEMBER, THE STEPS COMPRISING APPLYING TO THE MEMBER AN ALLOY CONSISTING OF ESSENTIALLY OF (1) FROM 90% OT 99.5%, BY WEIGHT, OF AT LEAST ONE ELEMENT SELECTED FROM THE GROUP CONSISTING OF PLATINUM, PALLADIUM AND RHODIUM AND (2) FROM 10% TO 0.5%, BY WEIGHT, OF AT LEAST ONE SUITABLE DOPING MATERIAL FOR PRODUCING A DESIRED SEMICONDUCTIVITY IN A PORTION OF THE SILICON CARBIDE MEMBER, AND HEATING THE APPLIED ALLOY AND SILICON CARBIDE MEMBER TO PRODUCEG A MOLTEN AREA OF THE ALLOY WHICH DISSOLVES A PORTION OF THE CONTACTING SILICON CARBIDE.
Claim 2
Dependent Claim
105 words
IN THE PROCESS OF FORMING A SEMICONDUCTOR TRANSITION REGION WITHIN A SINGLE CRYSTAL SILICON CARBIDE MEMBER, THE STEPS COMPRISING APPLYING TO THE MEMBER AN ALLOY CONSISTING OF ESSENTIALLY OF (1) FROM 90% OT 99.5%, BY WEIGHT, OF AT LEAST ONE ELEMENT SELECTED FROM THE GROUP CONSISTING OF PLATINUM, PALLADIUM AND RHODIUM AND (2) FROM 10% TO 0.5%, BY WEIGHT, OF AT LEAST ONE SUITABLE DOPING MATERIAL FOR PRODUCING A DESIRED SEMICONDUCTIVITY IN A PORTION OF THE SILICON CARBIDE MEMBER, AND HEATING THE APPLIED ALLOY AND SILICON CARBIDE MEMBER TO PRODUCEG A MOLTEN AREA OF THE ALLOY WHICH DISSOLVES A PORTION OF THE CONTACTING SILICON CARBIDE.
Claim 3
Dependent Claim
55 words
A SINGLE CRYSTAL SILICON CARBIDE MEMBER HAVING ON AT LEAST ONE SURFACE THEREOF A FUSED BONDED JUNCTION LAYER CONSISTING ESSENTIALLY OF PLATINUM AND A SUITABLE DOPING MATERIAL FOR PRODUCING A DESIRED SEMICONDUCTIVITY IN A PORTION OF THE SILICON CARBIDE MEMBER, AND AT LEAST ONE ELEMENT SELECTED FORM THE GROUP CONSISTING OF LEAD, TIN AND BISMUTH.
Claim 4
Dependent Claim
55 words
A SINGLE CRYSTAL SILICON CARBIDE MEMBER HAVING ON AT LEAST ONE SURFACE THEREOF A FUSED BONDED JUNCTION LAYER CONSISTING ESSENTIALLY OF PLATINUM AND A SUITABLE DOPING MATERIAL FOR PRODUCING A DESIRED SEMICONDUCTIVITY IN A PORTION OF THE SILICON CARBIDE MEMBER, AND AT LEAST ONE ELEMENT SELECTED FORM THE GROUP CONSISTING OF LEAD, TIN AND BISMUTH.
References Cited (Backward Citations)
CA585146A
Cited
US2530110A
Cited
US2504627A
Cited
DE1022385B
Cited
US2847335A
Cited
US2918396A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-11-12 | 1966-05-14 | 1966-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-11-12 | 1970-05-14 | 1970-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-11-12 | 1974-05-14 | 1974-11-13 | $7700.00 | Window Closed / Lapsed |