Patent US3023153A successfully refreshed from Google Patents.
US3023153A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of etching semi-conductor bodies
Assignee: RCA Corp
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Filing: 1959-04-13
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Granted: 1962-02-27
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Expires: 1979-04-13
Abstract
No abstract record available.
Inventors
- 👤 Kurshan Jerome
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:48
CPC Classifications
C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
128 words
A METHOD OF CONTROLLABLY ETCHING A PRESELECTED PORTION OF ONE SURFACE OF AN N-TYPE SEMI-CONDUCTOR BODY HAVING A SURFACE BARRIER COMPRISING CONTACTING A FIRST ELECTROLYTE TO SAID ONE SURFACE, CONTACTING A SECOND ELCTROLYTE TO ANOTHER SURFACE OF SAID BODY OPPOSITE SAID ONE SURFACE, APPLYING AN ETCHING POTENTIAL BETWEEN SAID FIRST ELECTROLYTE AND SAID BODY THEREBY TO INDUCE AN ETCHING CURRENT THROUGH SAID ONE SURFACE AND TO BIAS THE SURFACE BARRIER AT SAID ONE SURFACE IN ITS REVERSE DIRECTION, APPLYING A BALANCING POTENTIAL APPROXIMATELY EQUAL TO SAID ETCHING POTENTIAL BETWEEN SAID FIRST AND SECOND ELECTROLYTES THEREBY TO MAINTAIN SAID SECOND ELECTROLYTE AT A POTENTIAL ABOUT EQUAL TO THE POTENTIAL OF SAID BODY, AND CONTINUING SAID ETCHING UNTIL A SUDDEN INCREASE IN CURRENT OCCURS THROUGH THE WAFER AND THE ELECTROLYTE.
Claim 2
Independent Claim
128 words
A METHOD OF CONTROLLABLY ETCHING A PRESELECTED PORTION OF ONE SURFACE OF AN N-TYPE SEMI-CONDUCTOR BODY HAVING A SURFACE BARRIER COMPRISING CONTACTING A FIRST ELECTROLYTE TO SAID ONE SURFACE, CONTACTING A SECOND ELCTROLYTE TO ANOTHER SURFACE OF SAID BODY OPPOSITE SAID ONE SURFACE, APPLYING AN ETCHING POTENTIAL BETWEEN SAID FIRST ELECTROLYTE AND SAID BODY THEREBY TO INDUCE AN ETCHING CURRENT THROUGH SAID ONE SURFACE AND TO BIAS THE SURFACE BARRIER AT SAID ONE SURFACE IN ITS REVERSE DIRECTION, APPLYING A BALANCING POTENTIAL APPROXIMATELY EQUAL TO SAID ETCHING POTENTIAL BETWEEN SAID FIRST AND SECOND ELECTROLYTES THEREBY TO MAINTAIN SAID SECOND ELECTROLYTE AT A POTENTIAL ABOUT EQUAL TO THE POTENTIAL OF SAID BODY, AND CONTINUING SAID ETCHING UNTIL A SUDDEN INCREASE IN CURRENT OCCURS THROUGH THE WAFER AND THE ELECTROLYTE.
References Cited (Backward Citations)
US2846346A
Cited
US2875140A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-02-26 | 1965-08-28 | 1966-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-02-26 | 1969-08-28 | 1970-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-02-26 | 1973-08-28 | 1974-02-27 | $7700.00 | Window Closed / Lapsed |