Patent US3018539A successfully refreshed from Google Patents.
US3018539A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diffused base transistor and method of making same
Assignee: Motorola Solutions Inc
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Filing: 1956-11-06
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Granted: 1962-01-30
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Expires: 1976-11-06
Abstract
No abstract record available.
Inventors
- 👤 William E Taylor
- 👤 Clement J Kevane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:08
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/17; H10P; H10P10/00; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P95/00; H10P95/50; H10W76/60; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
144 words
A METHOD OF FORMING A RECTIFYING CONTACT AND AN OHMIC CONTACT WHICH ARE EACH OF ACCURATELY CONTROLLED SIZE, CONFIGURATION AND POSITION ON ONE FACE OF A SEMICONDUCTOR CRYSTAL ELEMENT WHICH HAS A RECTIFYING JUNCTION THEREIN DISPLACED FROM SAID FACE OF SUCH CRYSTAL ELEMENT A MICROMETRIC DEPTH, SAID METHOD INCLUDING PLACING SAID CRYSTAL ELEMENT IN VACUUM EVAPORATION APPARATUS, VAPOR DEPOSITING A PREDETERMINED AMOUNT OF RECTIFYING-JUNCTION FORMING IMPURITY MATERIAL ON TO A PREDETEERMINED PORTION OF SAID FACE CRYSTAL ELEMENT BY PROJECTING SUCH IMPURITY MATERIAL THROUGH AN APERTURED MASK WHICH DEFINES THE RESULTING DEPOSIT ON SAID CRYSTAL ELEMENT AS TO AREA CONFIGURATION AND POSITION, VAPOR DEPOSITING A PREDETERMINED AMOUNT OF OHMIC-CONTACT-FORMING METALLIC MATERIAL ON TO ANOTHER PREDETERMINED PORTION OF SAID FACE OF SAID CRYSTAL ELEMENT BY PROJECTING SUCH METALLIC MATERIAL THROUGH AN APERTURED MASK WHICH DEFINES THE RESULTING DEPOSIT ON SAID CRYSTAL ELEMENT AS TO AREA, CONFIGURATION
Claim 2
Independent Claim
144 words
A METHOD OF FORMING A RECTIFYING CONTACT AND AN OHMIC CONTACT WHICH ARE EACH OF ACCURATELY CONTROLLED SIZE, CONFIGURATION AND POSITION ON ONE FACE OF A SEMICONDUCTOR CRYSTAL ELEMENT WHICH HAS A RECTIFYING JUNCTION THEREIN DISPLACED FROM SAID FACE OF SUCH CRYSTAL ELEMENT A MICROMETRIC DEPTH, SAID METHOD INCLUDING PLACING SAID CRYSTAL ELEMENT IN VACUUM EVAPORATION APPARATUS, VAPOR DEPOSITING A PREDETERMINED AMOUNT OF RECTIFYING-JUNCTION FORMING IMPURITY MATERIAL ON TO A PREDETEERMINED PORTION OF SAID FACE CRYSTAL ELEMENT BY PROJECTING SUCH IMPURITY MATERIAL THROUGH AN APERTURED MASK WHICH DEFINES THE RESULTING DEPOSIT ON SAID CRYSTAL ELEMENT AS TO AREA CONFIGURATION AND POSITION, VAPOR DEPOSITING A PREDETERMINED AMOUNT OF OHMIC-CONTACT-FORMING METALLIC MATERIAL ON TO ANOTHER PREDETERMINED PORTION OF SAID FACE OF SAID CRYSTAL ELEMENT BY PROJECTING SUCH METALLIC MATERIAL THROUGH AN APERTURED MASK WHICH DEFINES THE RESULTING DEPOSIT ON SAID CRYSTAL ELEMENT AS TO AREA, CONFIGURATION
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-01-29 | 1965-07-31 | 1966-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-01-29 | 1969-07-31 | 1970-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-01-29 | 1973-07-31 | 1974-01-30 | $7700.00 | Window Closed / Lapsed |