Method of forming semiconductive bodies

Claim 1

THE METHOD OF FABRICATING A JUNCTION-TYPE SEMICONDUICTOR SIGNAL TRANSLATING DEVICE FROM A BODY OF N-TYPE CONDUCTIVITY SILICON WHICH COMPRISES PROVIDING A PLANAR JUNCTION AT A DEPTH WITHIN 0.1 MIL FROM A SURFACE OF SAID BODY, SAID METHOD COMPRISING THE STEPS OF PLACING SAID BODY IN AN ENCLOSER, MAINTAINING THE BODY FOR AT LEAST FIVE MINUTES AT A TEMPERATURE BETWEEN 900*C. AND 1300* C. AND CIRCULATING PAST SAID HEATED BODY THE VAPOR OF A BORON COMPOUND MIXED WITH AN INERT GAS AT A BORON VAPOR PRESSURE SUCH THAT ELEMENTAL BORON DIFFUSES INTO THE SOLID SILICON BODY WITHOUT ANY DISCERNIBLE MELTING OF THE SILICON SURFACE OR FORMATION OF A SIGNIFICANT BORON DEPOSIT ON SAID BODY, THEREBY TO CONVERT SAID DIFFUSED PORTION TO P-TYPE CONDUCTIVELY SILICON, REMOVING SAID BODY FROM SAID CHAMBER, AND TREATING SAID BODY TO REMOVE THE DIFFUSED SURFACE PORTIONS FROM SELECTED REGIONS, THEREBY TO PRODUCE A BODY HAVING AT LEAST ONE SURFACE PORTION OF P-TYPE CONDUCTIVITY AND AT LEAST ONE SURFACE PORTION OF N-TYPE CONDUCTIVITY.