US3013910A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of alloying an alloy material with the surface of a semiconductor body
Assignee: Telefunken AG
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Filing: 1958-05-02
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Granted: 1961-12-19
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Expires: 1978-05-02
Abstract
No abstract record available.
Inventors
- 👤 Friedrich W Dehmelt
- 👤 Grust Gerhard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:13
CPC Classifications
H; H10; H10D; H10D10/00; B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; C; C22; C22C; C22C1/00; C22C1/02; C30; C30B; C30B31/00; C30B31/04; H10D64/00; H10D64/20; H10F; H10F71/00; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
A METHOD OF ALLOYING A SEMI-CONDUCTOR MATERIAL WITH AN ALLOYING MIXTURE OF AT LEAST TWO MATERIALS EXCLUDING SAID SEMI-CONDUCTOR MATERIAL TO FORM THEREWITH AN INTERFACE WHEREIN THE DISSOLVING OF THE SEMI-CONDUCTOR MATERIAL IN THE ALLOYING MIXTURE IS REDUCED TO A MINIMUM, SAID METHOD COMPRISING THE STEPS OF: MIXING TOGETHER SAID ALLOYING MATERIALS IN SUCH PROPORTIONS AS TO FORM AN EUTECTIC OR PERITECTIC COMPOSITION WHICH MELTS AT A TEMPERATURE THAT IS VERY CLOSE TO BUT STILL BELOW THE ALLOYING TEMPERATURE OF SAID COMPOSITION WITH SAID SEMI-CONDUCTOR MATERIAL, WHICH ALLOYING TEMPERATURE IS A TEMPERATURE AT WHICH THE SURFACE OF SAID SEMI-CONDUCTOR MATERIAL IS WETTED SUBSTANTIALLY HOMOGENEOUSLY, BY THE EUTECTIC OR PERITECTIC COMPOSITION AND FUSING SAID ALLOYING MIXTURE AND PLACING SAID MIXTURE ON SAID SEMI-CONDUCTOR MATERIAL AND RAISING THE TEMPERATURE TO SAID ALLOYING TEMPERATURE.
Claim 2
Independent Claim
131 words
A METHOD OF ALLOYING A SEMI-CONDUCTOR MATERIAL WITH AN ALLOYING MIXTURE OF AT LEAST TWO MATERIALS EXCLUDING SAID SEMI-CONDUCTOR MATERIAL TO FORM THEREWITH AN INTERFACE WHEREIN THE DISSOLVING OF THE SEMI-CONDUCTOR MATERIAL IN THE ALLOYING MIXTURE IS REDUCED TO A MINIMUM, SAID METHOD COMPRISING THE STEPS OF: MIXING TOGETHER SAID ALLOYING MATERIALS IN SUCH PROPORTIONS AS TO FORM AN EUTECTIC OR PERITECTIC COMPOSITION WHICH MELTS AT A TEMPERATURE THAT IS VERY CLOSE TO BUT STILL BELOW THE ALLOYING TEMPERATURE OF SAID COMPOSITION WITH SAID SEMI-CONDUCTOR MATERIAL, WHICH ALLOYING TEMPERATURE IS A TEMPERATURE AT WHICH THE SURFACE OF SAID SEMI-CONDUCTOR MATERIAL IS WETTED SUBSTANTIALLY HOMOGENEOUSLY, BY THE EUTECTIC OR PERITECTIC COMPOSITION AND FUSING SAID ALLOYING MIXTURE AND PLACING SAID MIXTURE ON SAID SEMI-CONDUCTOR MATERIAL AND RAISING THE TEMPERATURE TO SAID ALLOYING TEMPERATURE.
References Cited (Backward Citations)
CA537909A
Cited
US2781481A
Cited
US2742383A
Cited
US2765245A
Cited
US2836522A
Cited
US2847336A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-12-18 | 1965-06-19 | 1965-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-12-18 | 1969-06-19 | 1969-12-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-12-18 | 1973-06-19 | 1973-12-19 | $7700.00 | Window Closed / Lapsed |