US2765245A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making p-n junction semiconductor units
Assignee: General Electric Co
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Filing: 1952-08-22
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Granted: 1956-10-02
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Expires: 1972-08-22
Abstract
No abstract record available.
Inventors
- 👤 Albert C English
- 👤 John B Seabrook
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:17
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; C; C30; C30B; C30B15/00; C30B15/02; C30B15/04; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
145 words
THE METHOD OF MAKING P-N JUNCTION UNITS, WHICH METHOD COMPRISES PREPARING A MELT COMPRISING A SEMICONDUCTOR SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON AND AN ELECTRICALLY SIGNIFICANT IMPURITY ELEMENT SELECTED FROM THE GROUP CONSISTING OF DONORS AND ACCEPTORS CAPABLE OF INDUCING IN SAID SEMICONDUCTOR CONDUCTION CARRIERS OF ONE PREDETERMINED POLARITY, SAID ELECTRICAL IMPURITY ELEMENT BEING INCLUDED IN SAID MELT TO AN EXTENT PROVIDING A MELTING POINT OF SAID MELT THAT IS LESS THAN 85% OF THE ABSOLUTE TEMPERATURE MELTING POINT OF THE SEMICONDUCTOR IN SAID MELT, AND DEPOSITING SAID MELT WHILE IN A LIQUID STATE AND AT A TEMPERATURE LESS THAN 85% OF THE ABSOLUTE TEMPERATURE MELTING POINT OF THE SEMICONDUCTOR IN SAID MELT UPON THE SURFACE OF A SOLID SEMICONDUCTOR BODY HAVING A PREDOMINANCE OF CONDUCTION CARRIERS THEREIN WHOSE POLARITY IS OPPOSITE TO THAT INDUCED BY THE IMPURITY ELEMENT IN SAID MELT.
Claim 2
Independent Claim
145 words
THE METHOD OF MAKING P-N JUNCTION UNITS, WHICH METHOD COMPRISES PREPARING A MELT COMPRISING A SEMICONDUCTOR SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON AND AN ELECTRICALLY SIGNIFICANT IMPURITY ELEMENT SELECTED FROM THE GROUP CONSISTING OF DONORS AND ACCEPTORS CAPABLE OF INDUCING IN SAID SEMICONDUCTOR CONDUCTION CARRIERS OF ONE PREDETERMINED POLARITY, SAID ELECTRICAL IMPURITY ELEMENT BEING INCLUDED IN SAID MELT TO AN EXTENT PROVIDING A MELTING POINT OF SAID MELT THAT IS LESS THAN 85% OF THE ABSOLUTE TEMPERATURE MELTING POINT OF THE SEMICONDUCTOR IN SAID MELT, AND DEPOSITING SAID MELT WHILE IN A LIQUID STATE AND AT A TEMPERATURE LESS THAN 85% OF THE ABSOLUTE TEMPERATURE MELTING POINT OF THE SEMICONDUCTOR IN SAID MELT UPON THE SURFACE OF A SOLID SEMICONDUCTOR BODY HAVING A PREDOMINANCE OF CONDUCTION CARRIERS THEREIN WHOSE POLARITY IS OPPOSITE TO THAT INDUCED BY THE IMPURITY ELEMENT IN SAID MELT.
References Cited (Backward Citations)
US2629672A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1959-10-02 | 1960-04-02 | 1960-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1963-10-02 | 1964-04-02 | 1964-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1967-10-02 | 1968-04-02 | 1968-10-02 | $7700.00 | Window Closed / Lapsed |