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Patent US2994811A successfully refreshed from Google Patents.
US2994811A
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Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
Assignee: AT&T Inc
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Filing: 1959-05-04
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Granted: 1961-08-01
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Expires: 1979-05-04
Abstract
No abstract record available.
Inventors
- 👤 Senitzky Benjamin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:15
CPC Classifications
H; H10; H10D; H10D10/00; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D62/00; H10D62/10; H10D99/00; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US2666814A
Cited
US2792539A
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US2791761A
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US2791760A
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US2791759A
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US2791758A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-07-31 | 1965-01-30 | 1965-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-07-31 | 1969-01-30 | 1969-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-07-31 | 1973-01-30 | 1973-08-01 | $7700.00 | Window Closed / Lapsed |