Formation of p-n junctions in p-type semiconductors

Claim 1

THE METHOD OF FABRICATING A HIGH-SPEED RECTIFIER DEVICE OF A BODY OF GERMANIUM OF P-TYPE CONDUCTIVITY WHICH COMPRISES DIFFUSING DONOR IMPURITIES INTO THE SURFACE OF BODY, THEREBY TO CONVERT A THIN SURFACE LAYER OF SAID BODY TO N-TYPE CONDUCTIVITY AND TO ESTABLISH, AT THE INTERFACE BETWEEN SAID LAYER AND SAID BODY, A FIRST RECTIFIER JUNCTION, RESTRICTING SAID LAYER TO A RELATIVELY SMALL PORTION OF THE SUPERFICIES OF SAID BODY, ALLOYING AN OHMIC CONNECTION TO A P-TYPE PORTION OF SAID BODY, BRINGING INTO ENGAGEMENT WITH SAID LAYER AN ELECTRODE COMPOSED OF AN INERT METAL HAVING THEREIN DONOR IMPURITIES IN RELATIVELY LARGE PROPORTIONS, APPLYING BETWEEN SAID ENGAGED ELECTRODE AND SAID ALLOYED CONNECTION A VOLTAGE IN EXCESS OF THE BREAKDOWN VOLTAGE OF SAID FIRST JUNCTION AND WITH A POLARITY TO BIAS SAID JUCTION IN THE REVERSE DIRECTION, MAINTAINING SAID VOLTAGE UNTIL HEAT, GENERATED AT SAID FIRST JUNCTION, BRINGS THE POINT OF ENGAGEMENT OF SAID ELECTRODE WITH SAID LAYER TO THE EUTECTIC MELTING TEMPERATURE OF GERMANIUM AND SAID METAL, WHEREUPON SAID ELECTRODE EXPLOSIVELY PIERCES SAID LAYER AND SAID FIRST JUNCTION AND PENALTIES THE P-TYPE PART OF SAID VOLTAGE LIMITING THE CURRENT THAT FLOWS IN RESPONSE TO SAID VOLTAGE TO AN AMPLITUDE AND A DURATION SUCH THAT SAID ELECTRODE FREEZES TO THE P-TYPE PORTION OF SAID BODY IMMEDIATELY AFTER PIERCING SAID FIRST JUNCTIOM, THE INTERFACE BETWEEN SAID ELECTRODE AND THE P-TYPE PART OF SAID BODY CONSTITUTING A SECOND, DISHED, JUNCTION OF WHICH THE PERIPHERY IS EVERYWHERE COTERMINOUS WITH THE UNPIERCED PORTION OF THE FIRST JUNCTION, AND THEREUPON REMOVING SAID VOLTTAGE.

Claim 2

THE METHOD OF FABRICATING A HIGH-SPEED RECTIFIER DEVICE OF A BODY OF GERMANIUM OF P-TYPE CONDUCTIVITY WHICH COMPRISES DIFFUSING DONOR IMPURITIES INTO THE SURFACE OF BODY, THEREBY TO CONVERT A THIN SURFACE LAYER OF SAID BODY TO N-TYPE CONDUCTIVITY AND TO ESTABLISH, AT THE INTERFACE BETWEEN SAID LAYER AND SAID BODY, A FIRST RECTIFIER JUNCTION, RESTRICTING SAID LAYER TO A RELATIVELY SMALL PORTION OF THE SUPERFICIES OF SAID BODY, ALLOYING AN OHMIC CONNECTION TO A P-TYPE PORTION OF SAID BODY, BRINGING INTO ENGAGEMENT WITH SAID LAYER AN ELECTRODE COMPOSED OF AN INERT METAL HAVING THEREIN DONOR IMPURITIES IN RELATIVELY LARGE PROPORTIONS, APPLYING BETWEEN SAID ENGAGED ELECTRODE AND SAID ALLOYED CONNECTION A VOLTAGE IN EXCESS OF THE BREAKDOWN VOLTAGE OF SAID FIRST JUNCTION AND WITH A POLARITY TO BIAS SAID JUCTION IN THE REVERSE DIRECTION, MAINTAINING SAID VOLTAGE UNTIL HEAT, GENERATED AT SAID FIRST JUNCTION, BRINGS THE POINT OF ENGAGEMENT OF SAID ELECTRODE WITH SAID LAYER TO THE EUTECTIC MELTING TEMPERATURE OF GERMANIUM AND SAID METAL, WHEREUPON SAID ELECTRODE EXPLOSIVELY PIERCES SAID LAYER AND SAID FIRST JUNCTION AND PENALTIES THE P-TYPE PART OF SAID VOLTAGE LIMITING THE CURRENT THAT FLOWS IN RESPONSE TO SAID VOLTAGE TO AN AMPLITUDE AND A DURATION SUCH THAT SAID ELECTRODE FREEZES TO THE P-TYPE PORTION OF SAID BODY IMMEDIATELY AFTER PIERCING SAID FIRST JUNCTIOM, THE INTERFACE BETWEEN SAID ELECTRODE AND THE P-TYPE PART OF SAID BODY CONSTITUTING A SECOND, DISHED, JUNCTION OF WHICH THE PERIPHERY IS EVERYWHERE COTERMINOUS WITH THE UNPIERCED PORTION OF THE FIRST JUNCTION, AND THEREUPON REMOVING SAID VOLTTAGE.