Patent US2963390A successfully refreshed from Google Patents.
US2963390A
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Method of making a photosensitive semi-conductor device
Assignee: Hoffman Electronics Corp
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Filing: 1955-09-26
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Granted: 1960-12-06
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Expires: 1975-09-26
Abstract
No abstract record available.
Inventors
- 👤 Jr Donald C Dickson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:16
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F99/00; H10F71/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
165 words
THE METHOD OF MAKING A LIGHT SENSITIVE SEMI-CONDUCTOR DEVICE, WHICH CONSISTS IN APPLYING A THIN LAYER OF BONDING MATERIAL TO A SURFACE OF A SUPPORT PLATE OF ELECTRICAL CONDUCTING MATERIAL, THEN DEPOSITING, BY VAPORIZATION AND CONDENSATION, A LAYER OF CRYSTALLINE SEMICONDUCTOR MATERIAL OF SELECTED CONDUCTIVITY TYPE THROUGHOUT AND HAVING A THICKNESS OF APPROXIMATELY 0.0002 INCH UPON SAID LAYER OF BONDING MATERIAL, SAID BONDING MATERIAL BEING OF THE TYPE TO FORM AN OHMIC CONTACT BE TWEEN SAID LAYER OF SEMI-CONDUCTOR MATERIAL AND SAID SUPPORT PLATE, THEREAFTER EXPOSING SAID LAYER OF SEMICONDUCTOR MATERIAL TO THE ACTION OF AN ACTIVATING SUBSTANCE IN VAPORIZED CONDITION TO PENETRATE THE LAYER WITH THE SUBSTANCE AT AND TO A DESIRED DEPTH APPROXIMATING 0.0001 INCH INWARDLY OF THE PLATE-REMOTE SURFACE OF SAID LAYER, WHEREBY TO CONSITUTE THE PORTION OF SAID LAYER OF SEMI-CONDUCTOR MATERIAL AT AND INWARDLY OF SAID PLATEREMOTE SURFACE AS MATERIAL OF DIFFERENT CONDUCTIVITY TYPE, AND TO FORM A P-N JUNCTION BETWEEN THE SUBSTANCE PENETRATED AND REMAINING PORTIONS OF SAID LAYER.
Claim 2
Independent Claim
165 words
THE METHOD OF MAKING A LIGHT SENSITIVE SEMI-CONDUCTOR DEVICE, WHICH CONSISTS IN APPLYING A THIN LAYER OF BONDING MATERIAL TO A SURFACE OF A SUPPORT PLATE OF ELECTRICAL CONDUCTING MATERIAL, THEN DEPOSITING, BY VAPORIZATION AND CONDENSATION, A LAYER OF CRYSTALLINE SEMICONDUCTOR MATERIAL OF SELECTED CONDUCTIVITY TYPE THROUGHOUT AND HAVING A THICKNESS OF APPROXIMATELY 0.0002 INCH UPON SAID LAYER OF BONDING MATERIAL, SAID BONDING MATERIAL BEING OF THE TYPE TO FORM AN OHMIC CONTACT BE TWEEN SAID LAYER OF SEMI-CONDUCTOR MATERIAL AND SAID SUPPORT PLATE, THEREAFTER EXPOSING SAID LAYER OF SEMICONDUCTOR MATERIAL TO THE ACTION OF AN ACTIVATING SUBSTANCE IN VAPORIZED CONDITION TO PENETRATE THE LAYER WITH THE SUBSTANCE AT AND TO A DESIRED DEPTH APPROXIMATING 0.0001 INCH INWARDLY OF THE PLATE-REMOTE SURFACE OF SAID LAYER, WHEREBY TO CONSITUTE THE PORTION OF SAID LAYER OF SEMI-CONDUCTOR MATERIAL AT AND INWARDLY OF SAID PLATEREMOTE SURFACE AS MATERIAL OF DIFFERENT CONDUCTIVITY TYPE, AND TO FORM A P-N JUNCTION BETWEEN THE SUBSTANCE PENETRATED AND REMAINING PORTIONS OF SAID LAYER.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-12-06 | 1964-06-06 | 1964-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-12-06 | 1968-06-06 | 1968-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-12-06 | 1972-06-06 | 1972-12-06 | $7700.00 | Window Closed / Lapsed |