Diffused transistors and processes for making the same

Claim 1

IN THE PROCESS OF MAKING A TRANSISTOR, THE STEPS OF PREPARING A BLANK FROM A CRYSTAL DOPED WITH AN IMPURITY IN GROWING TO GIVE IT A PREDETERMINED CARRIER CHARACTERISTIC, DIFFUSING INTO AN OUTER PORTION OF THE BLANK A DOPING IMPURITY OF AN OPPOSITE CARRIER CHARACTERISTIC FROM THE CARRIER CHARACTERISTIC OF THE IMPURITY IN THE BLANK TO PROVIDE A BASE ELEMENT, FUSING TO THE BLANK AT THE OUTER PORTION COMPRISING THE BASE ELEMENT A MEMBER CARRYING DOPING IMPURITIES OF TWO DIFFERENT CARRIER CHARACTERISTICS, THE MEMBER PENETRATING THROUGH THE OUTER PORTION, THE DOPING IMPURITIES CARRIED BY THE MEMBER HAVING DIFFERENT DIFFUSION RATES, THE DOPING IMPURITY HAVING THE HIGHER DIFFUSION RATE BEING OF THE SAME CARRIER CHARACTERISTIC AS THE IMPURITY IN THE BASE ELEMENT, THE PROPORTIONS OF THE TWO DOPING IMPURITIES IN THE MEMBER BEING SUCH THAT THE SLOWER DIFFUSING WILL PREDOMINATE IN THE MIXTURE, AND DIFFUSING INTO THE BLANK THE DOPING IMPURITIES CARRIED BY THE MEMBER FUSED TO THE BLANK, THE DOPING IMPURITIES HAVING THE HIGHER RATE OF DIFFUSION AND THE SAME CARRIER CHARACTERISTICS AS THE DOPING IMPURITY IN THE BASE ELEMENT PENETRATING FURTHER INTO THE BLANK THAN THE IMPURITY HAVING THE LOWER DIFFUSION RATE AND PROVIDING AN EXTENSION OF THE BASE ELEMENT, THE IMPURITY HAVING THE LOWER DIFFUSION RATE DOMINATING THE ZONE FROM WHICH THE IMPURITY HAVING THE HIGHER DIFFUSION RATE IS DIFFUSED PROVIDING AN EMITTER ELEMENT, THEREBY PROVIDING A STRUCTURE IN WHICH THE CARRIER CHARACTERISTICS OF THE ELEMENTS ALTERNATE.