Patent US2938772A successfully refreshed from Google Patents.
US2938772A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing extremely pure silicon
Assignee: Wacker Chemie AG
•
Filing: 1956-07-19
•
Granted: 1960-05-31
•
Expires: 1976-07-19
Abstract
No abstract record available.
Inventors
- 👤 Enk Eduard
- 👤 Nickl Julius
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:06
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C01; C01B; C01B33/00; C01B33/02
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
134 words
METHOD OF PRODUCING PURE, DENSE CRYSTALIZED SILICON FOR USE IN SEMICONDUCTORS BY THE THERMAL DECOMPOSITION OF A HALOGENATED SILANE CONTAINING HYDROGEN, WHICH COMPRISES PASSING VAPORS OF A HALOGENATED SILANE HAVING FROM ONE TO TWO HYDROGEN ATOMS ALONG AND THROUGH A HEATED REACTION ZONE IN AN AMOUNT OF FROM ABOUT 0.6 TO ABOUT 9.5 GRAMS PER HOUR SQ. CM. OF CROSS-SECTIONAL AREA OF SAID REACTION ZONE WHILE DIFFERENTIALLY HEATING THE REACTION ZONE SO AS TO MAINTAIN A TEMPERATURE GRADIENT ALONG SAID REACTION ZONE UNDER WHICH THE TEMPERATURE GRADIENT ALONG REACTION ZONE GRADUALLY INCREASES IN THE DIRECTION OF VAPOR FLOW TO A MAXIMUM OF BETWEEN 800 AND 1150* C. AND THEN DECREASES GRADUALLY FROM SAID MAXIMUM, AND DECOMPOSING THE HALOGENATED SILANE WHILE PASSING ALONG AND THROUGH SAID HEATED REACTION ZONE TO FORM PURE, DENSE, CRYSTALLIZED SILICON.
Claim 2
Dependent Claim
134 words
METHOD OF PRODUCING PURE, DENSE CRYSTALIZED SILICON FOR USE IN SEMICONDUCTORS BY THE THERMAL DECOMPOSITION OF A HALOGENATED SILANE CONTAINING HYDROGEN, WHICH COMPRISES PASSING VAPORS OF A HALOGENATED SILANE HAVING FROM ONE TO TWO HYDROGEN ATOMS ALONG AND THROUGH A HEATED REACTION ZONE IN AN AMOUNT OF FROM ABOUT 0.6 TO ABOUT 9.5 GRAMS PER HOUR SQ. CM. OF CROSS-SECTIONAL AREA OF SAID REACTION ZONE WHILE DIFFERENTIALLY HEATING THE REACTION ZONE SO AS TO MAINTAIN A TEMPERATURE GRADIENT ALONG SAID REACTION ZONE UNDER WHICH THE TEMPERATURE GRADIENT ALONG REACTION ZONE GRADUALLY INCREASES IN THE DIRECTION OF VAPOR FLOW TO A MAXIMUM OF BETWEEN 800 AND 1150* C. AND THEN DECREASES GRADUALLY FROM SAID MAXIMUM, AND DECOMPOSING THE HALOGENATED SILANE WHILE PASSING ALONG AND THROUGH SAID HEATED REACTION ZONE TO FORM PURE, DENSE, CRYSTALLIZED SILICON.
References Cited (Backward Citations)
US2441603A
Cited
FR1094760A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-05-31 | 1963-11-30 | 1964-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-05-31 | 1967-11-30 | 1968-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-05-31 | 1971-11-30 | 1972-05-31 | $7700.00 | Window Closed / Lapsed |