Patent US2258541A successfully refreshed from Google Patents.
Patent US2929137A successfully refreshed from Google Patents.
US2929137A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making ohmic connections to silicon semiconductor devices
Assignee: Texas Instruments Inc
•
Filing: 1957-01-04
•
Granted: 1960-03-22
•
Expires: 1977-01-04
Abstract
No abstract record available.
Inventors
- 👤 Morton E Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:37
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/60; H10P; H10P95/00; H10P95/50; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W72/00; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/923; Y10S428/924; Y10S428/926; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674; Y10T428/12708
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
113 words
A METHOD OF ATTACHING AN ELECTRICAL CONNECTION TO A SILICON SEMICONDUCTOR ELEMENT OF THE N-P-N TYPE THAT COMPRISES MAINTAINING AT A TEMPERATURE SLIGHTLY ABOVE 684 C. AN ALLOY CONSITING ESSENTIALLY OF TIN AND GOLD, WITH THE PIN PRESENT TO THE EXTENT OF APPROXIMATELY 90% AND WITH A MINOR PORPORTION OF A MATERIAL CAPABLE OF CAUSING SILICON TO HAVE N-TYPE CONDUCTIVITY, CONTACTING AN N-TYPE PORTION OF SAID SILICON SEMICONDUCTOR ELEMENT WITH SAID ALLOY IN THE PRESENCE OF CESIUM FLOURIDE TO PERMIT SAID ALLOY TO ADHERE AS A COATING TO SAID SILICON SEMICONDUCTOR ELEMENT, AND THEREAFTER ATTACHING AN ELECTRICAL CONNECTION TO THE COATED PORTION OF SAID SILICON SEM-CONDUCTOR ELEMENT BY MEANS OF A SOFT SOLDER.
Claim 2
Independent Claim
113 words
A METHOD OF ATTACHING AN ELECTRICAL CONNECTION TO A SILICON SEMICONDUCTOR ELEMENT OF THE N-P-N TYPE THAT COMPRISES MAINTAINING AT A TEMPERATURE SLIGHTLY ABOVE 684 C. AN ALLOY CONSITING ESSENTIALLY OF TIN AND GOLD, WITH THE PIN PRESENT TO THE EXTENT OF APPROXIMATELY 90% AND WITH A MINOR PORPORTION OF A MATERIAL CAPABLE OF CAUSING SILICON TO HAVE N-TYPE CONDUCTIVITY, CONTACTING AN N-TYPE PORTION OF SAID SILICON SEMICONDUCTOR ELEMENT WITH SAID ALLOY IN THE PRESENCE OF CESIUM FLOURIDE TO PERMIT SAID ALLOY TO ADHERE AS A COATING TO SAID SILICON SEMICONDUCTOR ELEMENT, AND THEREAFTER ATTACHING AN ELECTRICAL CONNECTION TO THE COATED PORTION OF SAID SILICON SEM-CONDUCTOR ELEMENT BY MEANS OF A SOFT SOLDER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-03-22 | 1963-09-21 | 1964-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-03-22 | 1967-09-21 | 1968-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-03-22 | 1971-09-21 | 1972-03-22 | $7700.00 | Window Closed / Lapsed |