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US2929137A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making ohmic connections to silicon semiconductor devices

Assignee: Texas Instruments Inc
•
Filing: 1957-01-04
•
Granted: 1960-03-22
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Expires: 1977-01-04
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Abstract

No abstract record available.

Inventors

  • 👤 Morton E Jones

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 10:48
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/60; H10P; H10P95/00; H10P95/50; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W72/00; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/923; Y10S428/924; Y10S428/926; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674; Y10T428/12708

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 113 words
A METHOD OF ATTACHING AN ELECTRICAL CONNECTION TO A SILICON SEMICONDUCTOR ELEMENT OF THE N-P-N TYPE THAT COMPRISES MAINTAINING AT A TEMPERATURE SLIGHTLY ABOVE 684 C. AN ALLOY CONSITING ESSENTIALLY OF TIN AND GOLD, WITH THE PIN PRESENT TO THE EXTENT OF APPROXIMATELY 90% AND WITH A MINOR PORPORTION OF A MATERIAL CAPABLE OF CAUSING SILICON TO HAVE N-TYPE CONDUCTIVITY, CONTACTING AN N-TYPE PORTION OF SAID SILICON SEMICONDUCTOR ELEMENT WITH SAID ALLOY IN THE PRESENCE OF CESIUM FLOURIDE TO PERMIT SAID ALLOY TO ADHERE AS A COATING TO SAID SILICON SEMICONDUCTOR ELEMENT, AND THEREAFTER ATTACHING AN ELECTRICAL CONNECTION TO THE COATED PORTION OF SAID SILICON SEM-CONDUCTOR ELEMENT BY MEANS OF A SOFT SOLDER.
Claim 2
Independent Claim 113 words
A METHOD OF ATTACHING AN ELECTRICAL CONNECTION TO A SILICON SEMICONDUCTOR ELEMENT OF THE N-P-N TYPE THAT COMPRISES MAINTAINING AT A TEMPERATURE SLIGHTLY ABOVE 684 C. AN ALLOY CONSITING ESSENTIALLY OF TIN AND GOLD, WITH THE PIN PRESENT TO THE EXTENT OF APPROXIMATELY 90% AND WITH A MINOR PORPORTION OF A MATERIAL CAPABLE OF CAUSING SILICON TO HAVE N-TYPE CONDUCTIVITY, CONTACTING AN N-TYPE PORTION OF SAID SILICON SEMICONDUCTOR ELEMENT WITH SAID ALLOY IN THE PRESENCE OF CESIUM FLOURIDE TO PERMIT SAID ALLOY TO ADHERE AS A COATING TO SAID SILICON SEMICONDUCTOR ELEMENT, AND THEREAFTER ATTACHING AN ELECTRICAL CONNECTION TO THE COATED PORTION OF SAID SILICON SEM-CONDUCTOR ELEMENT BY MEANS OF A SOFT SOLDER.

References Cited (Backward Citations)

US1996657A Cited
US2662984A Cited
US2633489A Cited
US2781577A Cited
US2793420A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1963-03-22 1963-09-21 1964-03-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1967-03-22 1967-09-21 1968-03-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1971-03-22 1971-09-21 1972-03-22 $7700.00 Window Closed / Lapsed

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