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US2923868A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor devices

Assignee: RCA Corp
•
Filing: 1954-07-22
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Granted: 1960-02-02
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Expires: 1974-07-22
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Abstract

No abstract record available.

Inventors

  • 👤 Lawrence J Giacoletto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 20:31
CPC Classifications
H; H10; H10D; H10D99/00; H10D8/00; H10D8/20; H10D8/25; H10P; H10P10/00; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/977

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 129 words
A METHOD OF PREPARING A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR CRYSTAL, A RECTIFYING ELECTRODE IN CONTACT WITH A FIRST SURFACE OF SAID CRYSTAL, SAID ELECTRODE HAVING A BARRIER REGION ASSOCIATED THEREWITH, AND A SECOND ELECTRODE IN NON-RECTIFYING CONTACT WITH ANOTHER SURFACE OF SAID CRYSTAL, SUCH THAT SAID DEVICE IS ADAPTED TO CONDUCT RELATIVELY LARGE AMOUNTS OF CURRENT AT A VOLTAGE LESS THAN THE ZENER VOLTAGE OF SAID CRYSTAL, SAID METHOD COMPRISING APPLYING A PREDETERMINED VOLTAGE SMALLER THAN SAID ZENER VOLTAGE IN THE REVERSE DIRECTION BETWEEN SAILD RECTIFYING ELECTRODE AND SAID CRYSTAL THEREBY THICKENING SAID BARRIER REGION A PREDETERMINED AMOUNT, REMOVING THE PORTION OF SAID CRYSTAL BETWEEN SAID BARRIER AND SAID SECOND SURFACE THEREBY PROVIDING A NEW SURFACE ON SAID CRYSTAL, AND CONNECTING SAID NON-RECTIFYING ELECTRODE TO SAID NEW SURFACE.
Claim 2
Independent Claim 129 words
A METHOD OF PREPARING A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR CRYSTAL, A RECTIFYING ELECTRODE IN CONTACT WITH A FIRST SURFACE OF SAID CRYSTAL, SAID ELECTRODE HAVING A BARRIER REGION ASSOCIATED THEREWITH, AND A SECOND ELECTRODE IN NON-RECTIFYING CONTACT WITH ANOTHER SURFACE OF SAID CRYSTAL, SUCH THAT SAID DEVICE IS ADAPTED TO CONDUCT RELATIVELY LARGE AMOUNTS OF CURRENT AT A VOLTAGE LESS THAN THE ZENER VOLTAGE OF SAID CRYSTAL, SAID METHOD COMPRISING APPLYING A PREDETERMINED VOLTAGE SMALLER THAN SAID ZENER VOLTAGE IN THE REVERSE DIRECTION BETWEEN SAILD RECTIFYING ELECTRODE AND SAID CRYSTAL THEREBY THICKENING SAID BARRIER REGION A PREDETERMINED AMOUNT, REMOVING THE PORTION OF SAID CRYSTAL BETWEEN SAID BARRIER AND SAID SECOND SURFACE THEREBY PROVIDING A NEW SURFACE ON SAID CRYSTAL, AND CONNECTING SAID NON-RECTIFYING ELECTRODE TO SAID NEW SURFACE.

References Cited (Backward Citations)

US2703855A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1963-02-01 1963-08-03 1964-02-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1967-02-01 1967-08-03 1968-02-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1971-02-01 1971-08-03 1972-02-02 $7700.00 Window Closed / Lapsed

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