US2923868A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices
Assignee: RCA Corp
•
Filing: 1954-07-22
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Granted: 1960-02-02
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Expires: 1974-07-22
Abstract
No abstract record available.
Inventors
- 👤 Lawrence J Giacoletto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:58
CPC Classifications
H; H10; H10D; H10D99/00; H10D8/00; H10D8/20; H10D8/25; H10P; H10P10/00; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
A METHOD OF PREPARING A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR CRYSTAL, A RECTIFYING ELECTRODE IN CONTACT WITH A FIRST SURFACE OF SAID CRYSTAL, SAID ELECTRODE HAVING A BARRIER REGION ASSOCIATED THEREWITH, AND A SECOND ELECTRODE IN NON-RECTIFYING CONTACT WITH ANOTHER SURFACE OF SAID CRYSTAL, SUCH THAT SAID DEVICE IS ADAPTED TO CONDUCT RELATIVELY LARGE AMOUNTS OF CURRENT AT A VOLTAGE LESS THAN THE ZENER VOLTAGE OF SAID CRYSTAL, SAID METHOD COMPRISING APPLYING A PREDETERMINED VOLTAGE SMALLER THAN SAID ZENER VOLTAGE IN THE REVERSE DIRECTION BETWEEN SAILD RECTIFYING ELECTRODE AND SAID CRYSTAL THEREBY THICKENING SAID BARRIER REGION A PREDETERMINED AMOUNT, REMOVING THE PORTION OF SAID CRYSTAL BETWEEN SAID BARRIER AND SAID SECOND SURFACE THEREBY PROVIDING A NEW SURFACE ON SAID CRYSTAL, AND CONNECTING SAID NON-RECTIFYING ELECTRODE TO SAID NEW SURFACE.
Claim 2
Independent Claim
129 words
A METHOD OF PREPARING A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR CRYSTAL, A RECTIFYING ELECTRODE IN CONTACT WITH A FIRST SURFACE OF SAID CRYSTAL, SAID ELECTRODE HAVING A BARRIER REGION ASSOCIATED THEREWITH, AND A SECOND ELECTRODE IN NON-RECTIFYING CONTACT WITH ANOTHER SURFACE OF SAID CRYSTAL, SUCH THAT SAID DEVICE IS ADAPTED TO CONDUCT RELATIVELY LARGE AMOUNTS OF CURRENT AT A VOLTAGE LESS THAN THE ZENER VOLTAGE OF SAID CRYSTAL, SAID METHOD COMPRISING APPLYING A PREDETERMINED VOLTAGE SMALLER THAN SAID ZENER VOLTAGE IN THE REVERSE DIRECTION BETWEEN SAILD RECTIFYING ELECTRODE AND SAID CRYSTAL THEREBY THICKENING SAID BARRIER REGION A PREDETERMINED AMOUNT, REMOVING THE PORTION OF SAID CRYSTAL BETWEEN SAID BARRIER AND SAID SECOND SURFACE THEREBY PROVIDING A NEW SURFACE ON SAID CRYSTAL, AND CONNECTING SAID NON-RECTIFYING ELECTRODE TO SAID NEW SURFACE.
References Cited (Backward Citations)
US2703855A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-02-01 | 1963-08-03 | 1964-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-02-01 | 1967-08-03 | 1968-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-02-01 | 1971-08-03 | 1972-02-02 | $7700.00 | Window Closed / Lapsed |