Patent US2914397A successfully refreshed from Google Patents.
US2914397A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Refining processes for semiconductor materials
Assignee: International Standard Electric Corp
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Filing: 1957-10-07
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Granted: 1959-11-24
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Expires: 1977-10-07
Abstract
No abstract record available.
Inventors
- 👤 Sterling Henley Frank
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:35
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; C; C30; C30B; C30B13/00; C30B13/06; H10D; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
151 words
A PROCESS FOR REMOVING IMPURITIES FROM A ROD OF SEMICONDUCTOR MATERIAL WHICH COMPRISES ARRAGING THE ROD IN A SUBSTANTIALLY VERTICAL POSITION, MELTING AN ASYMMETRICAL ANNULAR ZONE SURROUNDING AN UNMELTED PORTION OF THE ROD, THE GREATEST DEPTH OF MELT EXTENDING BEYOND THE CENTRAL LINEAR AXIS OF SAID ROD, RELATIVELY MOVING SAID MELTED ZONE FROM A FIRST END OF THE SECOND END OF SAID ROD IN A SUBSTANTIALLY RECTILLINEAR LINE, WHEREBY IMPURITIES FROM THE PORTIONS OF THE SEMICONDUCTOR WHICH HAVE BEEN MELTED ARE CONCENTRATED AT SAID SECOND END, THEN MELTING A SECOND SSYMMETERICAL ANNULAR ZONE SURROUNDING SAID ROD SIMILAR TO SAID FIRST ZONE BUT SIPLACED AROUND SAID ROD SUBSTANTIALLY ONE HUNDRED EIGHTY DEGREES, AND RELATIVELY MOVING SAID SECOND ANNULAR ZONE FROM SAID FIRST END OF SAID ROD TO SAID SECOND END OF SAID ROD, WHEREBY IMPURITIES REMINING IN SAID FIRST MENTIONED UNMELTED PORTION ARE LIKEWISE CONCENTRATED AT SAID SECOND END OF SAID ROD.
Claim 2
Dependent Claim
151 words
A PROCESS FOR REMOVING IMPURITIES FROM A ROD OF SEMICONDUCTOR MATERIAL WHICH COMPRISES ARRAGING THE ROD IN A SUBSTANTIALLY VERTICAL POSITION, MELTING AN ASYMMETRICAL ANNULAR ZONE SURROUNDING AN UNMELTED PORTION OF THE ROD, THE GREATEST DEPTH OF MELT EXTENDING BEYOND THE CENTRAL LINEAR AXIS OF SAID ROD, RELATIVELY MOVING SAID MELTED ZONE FROM A FIRST END OF THE SECOND END OF SAID ROD IN A SUBSTANTIALLY RECTILLINEAR LINE, WHEREBY IMPURITIES FROM THE PORTIONS OF THE SEMICONDUCTOR WHICH HAVE BEEN MELTED ARE CONCENTRATED AT SAID SECOND END, THEN MELTING A SECOND SSYMMETERICAL ANNULAR ZONE SURROUNDING SAID ROD SIMILAR TO SAID FIRST ZONE BUT SIPLACED AROUND SAID ROD SUBSTANTIALLY ONE HUNDRED EIGHTY DEGREES, AND RELATIVELY MOVING SAID SECOND ANNULAR ZONE FROM SAID FIRST END OF SAID ROD TO SAID SECOND END OF SAID ROD, WHEREBY IMPURITIES REMINING IN SAID FIRST MENTIONED UNMELTED PORTION ARE LIKEWISE CONCENTRATED AT SAID SECOND END OF SAID ROD.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-11-23 | 1963-05-25 | 1963-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-11-23 | 1967-05-25 | 1967-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-11-23 | 1971-05-25 | 1971-11-24 | $7700.00 | Window Closed / Lapsed |