US2906647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of treating semiconductor devices
Assignee: Lanteris Space LLC
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Filing: 1957-02-25
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Granted: 1959-09-29
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Expires: 1977-02-25
Abstract
No abstract record available.
Inventors
- 👤 Roschen John
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 06:04
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0444; G; G01; G01R; G01R13/00; G01R13/20; G01R21/00; H01; H01J; H01J25/00; H01J25/78; H01J29/00; H01J29/46; H01J29/70; H01J29/78; H01P; H01P1/00; H01P1/18; H01P7/00; H01P7/06; H03; H03B; H03B9/00; H03B9/01; H03B9/02; H10P14/00; H10P14/40; H10P14/46; H10P95/00; H10W; H10W40/00; H10W40/10; H10W99/00; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE HAVING ON THE SEMICONDUCTOR BODY AT LEAST ONE ELECTRODE COMPOSED OF A METAL WHICH CANNOT READILY BE SOLDERED, A METHOD OF SELECTIVELY PLATING SAID ELECTRODE WITH A READILYSOLDERABLE METALLIC MATERIAL FOR WHICH SAID BODY AND SAID ELECTRODE BOTH HAVE AFFINITY, WHICH METHOD COMPRISES PROVIDING ON SAID BODY AN OXIDE FILM OF SUFFICIENT THICKNESS TO PRECLUDE DEPOSITION OF SAID MATERIAL ON SAID BODY, CONDITIONING SAID ELECTRODE TO RECEIVE SAID MATERIAL, IMMERSING SAID DEVICE IN A BATH CONTAINING SAID MATERIAL AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO EFFECT PLATING OF SAID MATERIAL ON SAID ELECTRODE WITHOUT DISSOLVING SAID OXIDE FILM, DURING WHICH IMMERSION SAID OXIDE FILM IS EFFECTIVE TO PRECLUDE DEPOSITION OF SIAD MATERIAL ON SAID BODY, ANF FINALLY RINSING AND DRYING SAID DEVICE.
Claim 2
Dependent Claim
131 words
IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE HAVING ON THE SEMICONDUCTOR BODY AT LEAST ONE ELECTRODE COMPOSED OF A METAL WHICH CANNOT READILY BE SOLDERED, A METHOD OF SELECTIVELY PLATING SAID ELECTRODE WITH A READILYSOLDERABLE METALLIC MATERIAL FOR WHICH SAID BODY AND SAID ELECTRODE BOTH HAVE AFFINITY, WHICH METHOD COMPRISES PROVIDING ON SAID BODY AN OXIDE FILM OF SUFFICIENT THICKNESS TO PRECLUDE DEPOSITION OF SAID MATERIAL ON SAID BODY, CONDITIONING SAID ELECTRODE TO RECEIVE SAID MATERIAL, IMMERSING SAID DEVICE IN A BATH CONTAINING SAID MATERIAL AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO EFFECT PLATING OF SAID MATERIAL ON SAID ELECTRODE WITHOUT DISSOLVING SAID OXIDE FILM, DURING WHICH IMMERSION SAID OXIDE FILM IS EFFECTIVE TO PRECLUDE DEPOSITION OF SIAD MATERIAL ON SAID BODY, ANF FINALLY RINSING AND DRYING SAID DEVICE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-09-28 | 1963-03-30 | 1963-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-09-28 | 1967-03-30 | 1967-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-09-28 | 1971-03-30 | 1971-09-29 | $7700.00 | Window Closed / Lapsed |