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US2887411A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of producing selenium rectifiers

Assignee: Siemens Schuckertwerke AG
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Filing: 1956-05-29
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Granted: 1959-05-19
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Expires: 1976-05-29
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Abstract

No abstract record available.

Inventors

  • 👤 Hoppe Georg
  • 👤 Nitsche Erich

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 17:30
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/01; H10D48/04; H10D48/042; H10D48/043; H10P; H10P14/00; H10P14/20; H10P14/203; H10P14/22; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3236; H10P14/34; H10P14/3402; H10P14/38; H10P14/3802; H10P14/3806; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 117 words
IN THE METHOD OF PRODUCING DRY RECTIFIER CELLS COMPOSED OF A BACK PLATE, A SELENIUM SEMICONDUCTOR BODY AND A COUNTER ELECTRODE, WHICH COMPRISES SUCCESSIVELY DEPOSITING ON THE BACK PLATE A PLURALITY OF SUPERPOSED SELENIUM LAYERS OF WHICH AT LEAST THE FIRST ONE NEAREST THE BACK PLATE CONTAINS A HALOGEN ADDITION AND AT LEAST THE ULTIMATE ONE CLOSEST TO THE COUNTER ELECTRODE AND TO THE ULTIMATELY FORMED BARRIER LAYER CONTAINS AN ADDED BARRIERRESISTANCE PROMOTOR, THE STEPS OF SUBJECTING THE SELENIUM DEPOSITION TO CRYSTALLIZATION AFTER DEPOSITION OF THE PENULTIMATE SELENIUM LAYER, THEREAFTER DEPOSITING THE ULTIMATE SELENIUM LAYER IN AMORPHOUS FORM AND THEREAFTER THE COUNTER-ELECTRODE MATERIAL, AND THEREAFTER SUBJECTING THE RESULTING SANDWICH STRUCTURE TO BARRIER LAYER FORMING AND CRYSTALLIZATION TREATMENT.
Claim 2
Dependent Claim 117 words
IN THE METHOD OF PRODUCING DRY RECTIFIER CELLS COMPOSED OF A BACK PLATE, A SELENIUM SEMICONDUCTOR BODY AND A COUNTER ELECTRODE, WHICH COMPRISES SUCCESSIVELY DEPOSITING ON THE BACK PLATE A PLURALITY OF SUPERPOSED SELENIUM LAYERS OF WHICH AT LEAST THE FIRST ONE NEAREST THE BACK PLATE CONTAINS A HALOGEN ADDITION AND AT LEAST THE ULTIMATE ONE CLOSEST TO THE COUNTER ELECTRODE AND TO THE ULTIMATELY FORMED BARRIER LAYER CONTAINS AN ADDED BARRIERRESISTANCE PROMOTOR, THE STEPS OF SUBJECTING THE SELENIUM DEPOSITION TO CRYSTALLIZATION AFTER DEPOSITION OF THE PENULTIMATE SELENIUM LAYER, THEREAFTER DEPOSITING THE ULTIMATE SELENIUM LAYER IN AMORPHOUS FORM AND THEREAFTER THE COUNTER-ELECTRODE MATERIAL, AND THEREAFTER SUBJECTING THE RESULTING SANDWICH STRUCTURE TO BARRIER LAYER FORMING AND CRYSTALLIZATION TREATMENT.

References Cited (Backward Citations)

US2124306A Cited
US2279746A Cited
US2334554A Cited
US2390771A Cited
US2392744A Cited
US2453763A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1962-05-18 1962-11-17 1963-05-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1966-05-18 1966-11-17 1967-05-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1970-05-18 1970-11-17 1971-05-19 $7700.00 Window Closed / Lapsed

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