Patent US2887411A successfully refreshed from Google Patents.
US2887411A
Expired / Lapsed
US
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Method of producing selenium rectifiers
Assignee: Siemens Schuckertwerke AG
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Filing: 1956-05-29
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Granted: 1959-05-19
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Expires: 1976-05-29
Abstract
No abstract record available.
Inventors
- 👤 Hoppe Georg
- 👤 Nitsche Erich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:30
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/01; H10D48/04; H10D48/042; H10D48/043; H10P; H10P14/00; H10P14/20; H10P14/203; H10P14/22; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3236; H10P14/34; H10P14/3402; H10P14/38; H10P14/3802; H10P14/3806; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
117 words
IN THE METHOD OF PRODUCING DRY RECTIFIER CELLS COMPOSED OF A BACK PLATE, A SELENIUM SEMICONDUCTOR BODY AND A COUNTER ELECTRODE, WHICH COMPRISES SUCCESSIVELY DEPOSITING ON THE BACK PLATE A PLURALITY OF SUPERPOSED SELENIUM LAYERS OF WHICH AT LEAST THE FIRST ONE NEAREST THE BACK PLATE CONTAINS A HALOGEN ADDITION AND AT LEAST THE ULTIMATE ONE CLOSEST TO THE COUNTER ELECTRODE AND TO THE ULTIMATELY FORMED BARRIER LAYER CONTAINS AN ADDED BARRIERRESISTANCE PROMOTOR, THE STEPS OF SUBJECTING THE SELENIUM DEPOSITION TO CRYSTALLIZATION AFTER DEPOSITION OF THE PENULTIMATE SELENIUM LAYER, THEREAFTER DEPOSITING THE ULTIMATE SELENIUM LAYER IN AMORPHOUS FORM AND THEREAFTER THE COUNTER-ELECTRODE MATERIAL, AND THEREAFTER SUBJECTING THE RESULTING SANDWICH STRUCTURE TO BARRIER LAYER FORMING AND CRYSTALLIZATION TREATMENT.
Claim 2
Dependent Claim
117 words
IN THE METHOD OF PRODUCING DRY RECTIFIER CELLS COMPOSED OF A BACK PLATE, A SELENIUM SEMICONDUCTOR BODY AND A COUNTER ELECTRODE, WHICH COMPRISES SUCCESSIVELY DEPOSITING ON THE BACK PLATE A PLURALITY OF SUPERPOSED SELENIUM LAYERS OF WHICH AT LEAST THE FIRST ONE NEAREST THE BACK PLATE CONTAINS A HALOGEN ADDITION AND AT LEAST THE ULTIMATE ONE CLOSEST TO THE COUNTER ELECTRODE AND TO THE ULTIMATELY FORMED BARRIER LAYER CONTAINS AN ADDED BARRIERRESISTANCE PROMOTOR, THE STEPS OF SUBJECTING THE SELENIUM DEPOSITION TO CRYSTALLIZATION AFTER DEPOSITION OF THE PENULTIMATE SELENIUM LAYER, THEREAFTER DEPOSITING THE ULTIMATE SELENIUM LAYER IN AMORPHOUS FORM AND THEREAFTER THE COUNTER-ELECTRODE MATERIAL, AND THEREAFTER SUBJECTING THE RESULTING SANDWICH STRUCTURE TO BARRIER LAYER FORMING AND CRYSTALLIZATION TREATMENT.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-05-18 | 1962-11-17 | 1963-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-05-18 | 1966-11-17 | 1967-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-05-18 | 1970-11-17 | 1971-05-19 | $7700.00 | Window Closed / Lapsed |