Patent US4142894A successfully refreshed from Google Patents.
Patent US2885609A successfully refreshed from Google Patents.
US2885609A
Expired / Lapsed
US
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Semiconductive device and method for the fabrication thereof
Assignee: Lanteris Space LLC
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Filing: 1955-01-31
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Granted: 1959-05-05
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Expires: 1975-01-31
Abstract
No abstract record available.
Inventors
- 👤 Richard A Williams
- 👤 John W Tiley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:41
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D10/00; H10D99/00; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; H10P95/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
63 words
A TRANSISTOR COMPRISING A BASE ELEMENT CONSISTING OF A BODY OF SEMICONDUCTIVE MATERIAL, AN EMITTER ELEMENT CONSISTING OF A RECTIFYING-JUNCTION CONNECTION FORMED IN ONE SURFACE OF SAID BODY, AND A COLLECTOR ELEMENT CONSISTING OF A RECTIFYING METAL-TO-SEMICONDUCTOR AREA-CONTACT TO A SURFACR OF SAID BODY OPPOSITE SAID ONE SURFACE, SAID AREA-CONTACT BEING AT LEAST IN AREA AS THE CONFRONTING SURFACE OF SAID RECTIFYING-JUNCTION CONNECTION.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-05-04 | 1962-11-03 | 1963-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-05-04 | 1966-11-03 | 1967-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-05-04 | 1970-11-03 | 1971-05-05 | $7700.00 | Window Closed / Lapsed |