← Back to Patent Explorer
US2872299A Expired / Lapsed US ⏱️ 0.0 years remaining

Preparation of reactive materials in a molten non-reactive lined crucible

Assignee: RCA Corp
•
Filing: 1954-11-30
•
Granted: 1959-02-03
•
Expires: 1974-11-30
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 Philip R Celmer
  • 👤 Robert V Jensen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 15:17
CPC Classifications
F; F27; F27B; F27B14/00; F27B14/08; B; B01; B01J; B01J6/00; B01J6/005; C; C01; C01B; C01B33/00; C01B33/02; C30; C30B; C30B15/00; C30B15/10; F27B14/10; F27B2014/002; F27M; F27M2001/00; F27M2001/03; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 96 words
IN THE CZOCHRALSKI METHOD OF GROWING SINGLE CRYSTALS OF SILLICON, THE METHOD OF PREVENTING REACTION BETWEEN SILICON AND CRUCIBLE MATERIALS COMPRISING THE STEPS OF: PROVIDING A GRAPHITE CRUCIBLE TO HOLD SAID SILICON WITH AN INTERNAL LINING OF A MATERIAL NON-REACTIVE WITH SAID SILICON AND WHOSE DENSITY IS GREATYER THAN THE DENSITY OF SAID SILICON AND WHYOSE MELTING POINT IS LOWER AND WHOSE BOILING POINT IS HIGHER THAN THE MELTING POINTS OF SAID SILICON, HEATING SAID CRUCIBLE SO THAT SAID LINING BECOMES MOLTEN, ROTATING SAID CRUCIBLE WHILE FEEDING SAID SILICON THEREINTO WHEREUPON SAID SILICON BECOMES MOLTEN, SAID
Claim 2
Dependent Claim 96 words
IN THE CZOCHRALSKI METHOD OF GROWING SINGLE CRYSTALS OF SILLICON, THE METHOD OF PREVENTING REACTION BETWEEN SILICON AND CRUCIBLE MATERIALS COMPRISING THE STEPS OF: PROVIDING A GRAPHITE CRUCIBLE TO HOLD SAID SILICON WITH AN INTERNAL LINING OF A MATERIAL NON-REACTIVE WITH SAID SILICON AND WHOSE DENSITY IS GREATYER THAN THE DENSITY OF SAID SILICON AND WHYOSE MELTING POINT IS LOWER AND WHOSE BOILING POINT IS HIGHER THAN THE MELTING POINTS OF SAID SILICON, HEATING SAID CRUCIBLE SO THAT SAID LINING BECOMES MOLTEN, ROTATING SAID CRUCIBLE WHILE FEEDING SAID SILICON THEREINTO WHEREUPON SAID SILICON BECOMES MOLTEN, SAID

References Cited (Backward Citations)

US2631356A Cited
US1831310A Cited
US2607674A Cited
US2686212A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1962-02-02 1962-08-04 1963-02-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1966-02-02 1966-08-04 1967-02-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1970-02-02 1970-08-04 1971-02-03 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag