US2850444A
Expired / Lapsed
US
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Pulse method of etching semiconductor junction devices
Assignee: RCA Corp
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Filing: 1954-11-01
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Granted: 1958-09-02
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Expires: 1974-11-01
Abstract
No abstract record available.
Inventors
- 👤 Lorne D Armstrong
- 👤 Kuznetzoff Philip
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:59
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; C; C25; C25F; C25F3/00; C25F3/02; C25F3/12
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
104 words
METHOD OF ETCHING A SEMICONDUCTOR DEVICE INCLUDING A BODY OF N-TYPE SEMICONDUCTIVE GERMANIUM HAVING A PAIR OF INDIUM ELECTRODES FUSED TO OPPOSITE SURFACES THEREOF AND A PAIR OF P-N RECTIFYING JUNCTIONS WITHIN SAID BODY, EACH OF SAID JUNCTIONS BEING ASSOCIATED WITH ONE OF SAID ELECTRODES, SAID METHOD COMPRISING CONTACTING AN ELECTROLYTE TO SAID DEVICE, SAID ELECTROLYTE BEING AN AQUEOUS SOLUTION OF A COMPOUND SELECTED FROM THE GROUP CONSISTING OF LIOH, NAOH AND KOH AND HAVING A CONCENTRATION OF AT LEAST 25 WGT. PERCENT, INTERMITTENTLY APPLYING A UNIDIRECTIONAL POTENTIAL OF ABOUT 4 TO 5 VOLTS BETWEEN ONE OF SAID ELECTRODES AND SAID ELECTROLYTE IN A
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-09-01 | 1962-03-03 | 1962-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-09-01 | 1966-03-03 | 1966-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-09-01 | 1970-03-03 | 1970-09-02 | $7700.00 | Window Closed / Lapsed |