US2845372A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Grown junction type transistors and method of making same
Assignee: Texas Instruments Inc
•
Filing: 1954-05-10
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Granted: 1958-07-29
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Expires: 1974-05-10
Abstract
No abstract record available.
Inventors
- 👤 Morton E Jones
- 👤 Willis A Adcock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:21
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B15/00; C30B15/20; H10D; H10D99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
42 words
A GROWN CRYSTAL JUNCTION TRANSITOR, THE COMPRISES AN N-P-N SILICON CRYSTAL SEGMENT, THE COLLECTOR SECTION OF WHICH CONTAINS ABOUT 0.5 2.0X107 ANTIMONY ATOMS PER SILICON ATOM, THE BASE LAYER OF WHICH CONTAINS ABOUT THE SAME PROPORTION OF ANTIMONY ATOMS PLUS ABOUT 2.5
Claim 2
Dependent Claim
42 words
A GROWN CRYSTAL JUNCTION TRANSITOR, THE COMPRISES AN N-P-N SILICON CRYSTAL SEGMENT, THE COLLECTOR SECTION OF WHICH CONTAINS ABOUT 0.5 2.0X107 ANTIMONY ATOMS PER SILICON ATOM, THE BASE LAYER OF WHICH CONTAINS ABOUT THE SAME PROPORTION OF ANTIMONY ATOMS PLUS ABOUT 2.5
References Cited (Backward Citations)
US2631356A
Cited
US2623102A
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BE503719A
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US2654059A
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US2736822A
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US2705767A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-07-28 | 1962-01-27 | 1962-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-07-28 | 1966-01-27 | 1966-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-07-28 | 1970-01-27 | 1970-07-29 | $7700.00 | Window Closed / Lapsed |