Patent US2835615A successfully refreshed from Google Patents.
US2835615A
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Method of producing a semiconductor alloy junction
Assignee: Clevite Corp
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Filing: 1956-01-23
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Granted: 1958-05-20
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Expires: 1976-01-23
Abstract
No abstract record available.
Inventors
- 👤 Jr Berahard A Leinfelder
- 👤 Lawrence D Favro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:59
CPC Classifications
H; H10; H10D; H10D99/00; C; C30; C30B; C30B31/00; C30B31/04; H10D1/00; H10D1/40; H10D48/00; H10D48/30; H10D48/38; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S228/00; Y10S228/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
A METHOD OF MAKING A SEMICONDUCTOR ALLOY JUNCTION WHICH COMPRISES THE STEPS OF POSITIONING A PIECE OF INDIUM OVERLY A SEMICONDUCTIVE N-TYPE GERMANIUM BODY; HEATING THE INDIUM AND GERMANIUM TO CAUSE THE INDIUM TO GO INTO SOLUTION WITH THE ADJACENT PORTION OF THE GERMANIUM, DURING SAID HEATING PROVIDING ALUMINUM AT THE INTERFACE BETWEEN THE INDIUM AND THE GERMANIUM TO COMBINE WITH ANY OXYGEN THEREAT AND FORM AN ALUMINUM-OXIDE PRECIPITATE WHICH FLOATS TO THE TOP OF THE INDIOUM, COOLING THE ASSEMBLY OF GERMANIUM, INDIUM AND ALUMINUM TO PRODUCE A SEMICONDUCTIVE P-TYPE INDIUMDOPED GERMANIUM REGION SEPARATED FROM THE N-TYPE GERMANIUM BY A RECTIFYING JUNCTION AND TO PRODUCE ON THE UPPER SURFACE OF THE INDIUM AN ALUMINUM OXIDE COATING, AND REMOVING SAID ALUMINUM OXIDE COATING FROM THE UPPER SURFACE OF THE INDIUM.
Claim 2
Independent Claim
129 words
A METHOD OF MAKING A SEMICONDUCTOR ALLOY JUNCTION WHICH COMPRISES THE STEPS OF POSITIONING A PIECE OF INDIUM OVERLY A SEMICONDUCTIVE N-TYPE GERMANIUM BODY; HEATING THE INDIUM AND GERMANIUM TO CAUSE THE INDIUM TO GO INTO SOLUTION WITH THE ADJACENT PORTION OF THE GERMANIUM, DURING SAID HEATING PROVIDING ALUMINUM AT THE INTERFACE BETWEEN THE INDIUM AND THE GERMANIUM TO COMBINE WITH ANY OXYGEN THEREAT AND FORM AN ALUMINUM-OXIDE PRECIPITATE WHICH FLOATS TO THE TOP OF THE INDIOUM, COOLING THE ASSEMBLY OF GERMANIUM, INDIUM AND ALUMINUM TO PRODUCE A SEMICONDUCTIVE P-TYPE INDIUMDOPED GERMANIUM REGION SEPARATED FROM THE N-TYPE GERMANIUM BY A RECTIFYING JUNCTION AND TO PRODUCE ON THE UPPER SURFACE OF THE INDIUM AN ALUMINUM OXIDE COATING, AND REMOVING SAID ALUMINUM OXIDE COATING FROM THE UPPER SURFACE OF THE INDIUM.
References Cited (Backward Citations)
US2480351A
Cited
US2736847A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-05-19 | 1961-11-18 | 1962-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-05-19 | 1965-11-18 | 1966-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-05-19 | 1969-11-18 | 1970-05-20 | $7700.00 | Window Closed / Lapsed |