Patent US2823102A successfully refreshed from Google Patents.
US2823102A
Expired / Lapsed
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Method for producing single crystals of silicon
Assignee: Clevite Corp
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Filing: 1954-02-10
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Granted: 1958-02-11
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Expires: 1974-02-10
Abstract
No abstract record available.
Inventors
- 👤 Milton L Selker
- 👤 Joseph F Cerness
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:57
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/002; B; B29; B29C; B29C70/00; B29C70/58; C01; C01B; C01B33/00; C01B33/02; Y; Y10; Y10S; Y10S117/00; Y10S117/90
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
41 words
A METHOD OF PRODUCING SINGLE CRYSTAL SILICON WHICH COMPRISES THE STEPS OF HEATING TO MOLTEN CONDITION AND THEREAFTER COOLING SILICON IN A NON-REACTIVE ATMOSPHERE, AND DURING SAID HEATING AND COOLING STEPS SUPPORTING THE SILICON ON SUBSTANTIALLY PURE BORON NITRIDE POWDER FOR
Claim 2
Independent Claim
41 words
A METHOD OF PRODUCING SINGLE CRYSTAL SILICON WHICH COMPRISES THE STEPS OF HEATING TO MOLTEN CONDITION AND THEREAFTER COOLING SILICON IN A NON-REACTIVE ATMOSPHERE, AND DURING SAID HEATING AND COOLING STEPS SUPPORTING THE SILICON ON SUBSTANTIALLY PURE BORON NITRIDE POWDER FOR
References Cited (Backward Citations)
GB191421378A
Cited
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Cited
US2475810A
Cited
US2469418A
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US2674520A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-02-10 | 1961-08-12 | 1962-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-02-10 | 1965-08-12 | 1966-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-02-10 | 1969-08-12 | 1970-02-11 | $7700.00 | Window Closed / Lapsed |