Patent US2813782A successfully refreshed from Google Patents.
US2813782A
Expired / Lapsed
US
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Method of masking during semiconductor etching
Assignee: Individual
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Filing: 1956-02-07
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Granted: 1957-11-19
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Expires: 1976-02-07
Abstract
No abstract record available.
Inventors
- 👤 Spanos John
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:29
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
86 words
IN A METHOD OF ETCHING A PROTION OF A SEMICONDUCTOR TRANSLATING DEVICE WITH A CORROSIVE ETCHING SOLUTION AND PROTECTING THE REMAINDER OF SAID DEVICE FROM CORROSION BY SAID ETCHING SOLUTION; COMPRISING THE STEPS OF COATING SAID REMAINDER OF SAID DEVICE WITH LATEX, APPLYING ACETIC ACID TO THE LATEX COATING TO COAGULATE IT, WETTING SAID DEVICE PROTECTED IN PART BY SAID COAGULATED LATEX WITH SAID ETCHING SOLUTION FOR A PREDETERMINED PERIOD, SEPARATING SAID DEVICE AND SAID ETCHING SOLUTION, AND PHYSICALLY SEPARATING SAID COAGULATED LATEX AND SAID DEVICE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-11-18 | 1961-05-20 | 1961-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-11-18 | 1965-05-20 | 1965-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-11-18 | 1969-05-20 | 1969-11-19 | $7700.00 | Window Closed / Lapsed |