US2783168A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for preparing rod-shaped, crystalline semiconductor bodies
Assignee: Siemens Schuckertwerke AG
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Filing: 1955-02-18
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Granted: 1957-02-26
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Expires: 1975-02-18
Abstract
No abstract record available.
Inventors
- 👤 Schweickert Hans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:35
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/02; C30B11/00; C30B11/04; C30B11/08; C30B11/10; C30B15/06; C30B15/08; Y; Y10; Y10S; Y10S117/00; Y10S117/91; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1056
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
180 words
A METHOD OF PREPARING A ROD-SHAPED, PLURAL-ZONED MONOCRYSTALLINE SEMICONDUCTOR BODY HAVING AT LEAST ONE ZONE CONTAINING A SUBSTANTIAL IMPURITY SUBSTANCE CONFERRING A CONDUCTIVITY TYPE CHARACTERISTIC DIFFERENT FROM AND ADJACENT ZONE, THE SUBSTANTIAL IMPURITY SUBSTANCE OF SAID ONE ZONE BEING SELECTED FROM THE GROUP CONSISTING OF P AND N CONDUCTIVITY TYPE DETERMINING IMPURITIES, WHICH COMPRISES THE STEPS OF MELTING IN A CRUCIBLE AN AMOUNT OF MATERIAL FROM WHICH THE CRYSTAL IS TO BE PULLED THAR PRPRESENTS NOT MORE THAN A FRICTION OF THE MATERIAL MAKING UP THE FINISHED CRYSTALLINE BODY AND CONSISTS OF A MIXTURE OF A DEMICONDUCTOR AND AN AMOUNT OF SAID IMPURITY SUBSTANCE CAUSING ONE OF SAID TYPES OF CONDUCTIVITY, PULLING A ZONE OF SAID CRYSTALLINE BODY FROM THE MELT, REMOVING REMAINING MELT FROM THE CRUCIBLE EXCEPTING A RESIDUAL DROP IN CONTACT WITH SAID CRYSTALLINE BODY, CHARGING THE CRUCIBLE WITH A SIMILARLY LIMITED AMOUNT OF SEMICONDUCTOR MATERIAL HAVING A CONDUCTIVITY TYPE CHARACTERISTIC DIFFERING FROM THAT OF SAID PULLED ZONE, HEATING SAID LAST-NAMED MIXTURE TO FORM A MELT, AND PULLING ANOTHER ZONE OF SAID CRYSTALLINE OF BODY FROM THE MELT.
Claim 2
Independent Claim
180 words
A METHOD OF PREPARING A ROD-SHAPED, PLURAL-ZONED MONOCRYSTALLINE SEMICONDUCTOR BODY HAVING AT LEAST ONE ZONE CONTAINING A SUBSTANTIAL IMPURITY SUBSTANCE CONFERRING A CONDUCTIVITY TYPE CHARACTERISTIC DIFFERENT FROM AND ADJACENT ZONE, THE SUBSTANTIAL IMPURITY SUBSTANCE OF SAID ONE ZONE BEING SELECTED FROM THE GROUP CONSISTING OF P AND N CONDUCTIVITY TYPE DETERMINING IMPURITIES, WHICH COMPRISES THE STEPS OF MELTING IN A CRUCIBLE AN AMOUNT OF MATERIAL FROM WHICH THE CRYSTAL IS TO BE PULLED THAR PRPRESENTS NOT MORE THAN A FRICTION OF THE MATERIAL MAKING UP THE FINISHED CRYSTALLINE BODY AND CONSISTS OF A MIXTURE OF A DEMICONDUCTOR AND AN AMOUNT OF SAID IMPURITY SUBSTANCE CAUSING ONE OF SAID TYPES OF CONDUCTIVITY, PULLING A ZONE OF SAID CRYSTALLINE BODY FROM THE MELT, REMOVING REMAINING MELT FROM THE CRUCIBLE EXCEPTING A RESIDUAL DROP IN CONTACT WITH SAID CRYSTALLINE BODY, CHARGING THE CRUCIBLE WITH A SIMILARLY LIMITED AMOUNT OF SEMICONDUCTOR MATERIAL HAVING A CONDUCTIVITY TYPE CHARACTERISTIC DIFFERING FROM THAT OF SAID PULLED ZONE, HEATING SAID LAST-NAMED MIXTURE TO FORM A MELT, AND PULLING ANOTHER ZONE OF SAID CRYSTALLINE OF BODY FROM THE MELT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-02-26 | 1960-08-27 | 1961-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-02-26 | 1964-08-27 | 1965-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-02-26 | 1968-08-27 | 1969-02-26 | $7700.00 | Window Closed / Lapsed |