Patent US2767137A successfully refreshed from Google Patents.
US2767137A
Expired / Lapsed
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Method for electrolytic etching
Assignee: Lanteris Space LLC
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Filing: 1954-07-15
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Granted: 1956-10-16
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Expires: 1974-07-15
Abstract
No abstract record available.
Inventors
- 👤 Dundred D Evers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:59
CPC Classifications
C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
77 words
A METHOD OF PROVIDING A REGION OF ACCURATELY CONTROLLED THICKNESS IN A FLAT WAFER OF SEMICONDUCTIVE MATERIAL, WHICH METHOD COMPRISES: FORMING A PAIR OF JET ETCHING MEANS; APPLYING ONE OF SAID JET ETCHING MEANS TO ONE SIDE OF SAID WAFER TO REDUCE THE THICKNESS OF ONE PORTION OF SAID WAFER; SIMULTANEOUSLY APPLYING THE OTHER OF SAID JET ETCHING MEANS TO SAID ONE SIDE OF SAID WAFER TO REDUCE THE THICKNESS OF ANOTHER PORTION SPACED FROM SAID FIRST
Claim 2
Independent Claim
77 words
A METHOD OF PROVIDING A REGION OF ACCURATELY CONTROLLED THICKNESS IN A FLAT WAFER OF SEMICONDUCTIVE MATERIAL, WHICH METHOD COMPRISES: FORMING A PAIR OF JET ETCHING MEANS; APPLYING ONE OF SAID JET ETCHING MEANS TO ONE SIDE OF SAID WAFER TO REDUCE THE THICKNESS OF ONE PORTION OF SAID WAFER; SIMULTANEOUSLY APPLYING THE OTHER OF SAID JET ETCHING MEANS TO SAID ONE SIDE OF SAID WAFER TO REDUCE THE THICKNESS OF ANOTHER PORTION SPACED FROM SAID FIRST
References Cited (Backward Citations)
GB631756A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1959-10-16 | 1960-04-16 | 1960-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1963-10-16 | 1964-04-16 | 1964-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1967-10-16 | 1968-04-16 | 1968-10-16 | $7700.00 | Window Closed / Lapsed |