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US2748031A Expired / Lapsed US ⏱️ 0.0 years remaining

Reproduction of printed patterns by vacuum evaporation

Assignee: Individual
•
Filing: 1952-12-31
•
Granted: 1956-05-29
•
Expires: 1972-12-31
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Abstract

No abstract record available.

Inventors

  • 👤 Kafig Emanuel

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 04:06
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/34; C03C17/36; C03C17/3602; C03C17/3613; C03C17/3655; C03C17/3657; C23; C23C; C23C14/00; C23C14/04; C23C14/042; H; H05; H05K; H05K3/00; H05K3/02; H05K3/04; H05K3/046; H05K3/048; H10; H10N; H10N97/00; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49156; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24851; Y10T428/24917

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 129 words
THE PROCESS OF PRODUCING A PATTERN OF METALLIC AREAS UPON A SUPPORTING BASE MATERIAL, COMPRISING THE STEPS OF APPLYING A LAYER OF A SOLUBLE SUBSTANCE HAVING A CONFIGURATION WHICH IS THE NEGATIVE OF THE DESIRED PATTERN, DEPOSITING BY VAPOR DEPOSITION OF A LAYER OF SILICON MONOXIDE ON THE SURFACE OF THE BASE MATERIAL, RETAINING IN VACUO SAID SUPPORTING BASE MATERIAL HAVING THEREON SAID AFOREMENTIONED LAYER OF SILICON MONOXIDE TO PREVENT OXIDATION OF SAID SILICON MONOXIDE, DEPOSITING BY VAPOR DEPOSITION UPON THE SECOND MENTIONED LAYER OF AN OVERALL LAYER OF THE DESIRED METAL, COVERING THE ENTIRE LAYERED AREA WITH A SECOND LAYER OF SILICON MONOXIDE, AND REMOVING THE LAYER OF SOLUBLE SUBSTANCE AND THOSE PORTIONS OF METAL OVERLYING SAID SOLUBLE SUBSTANCE BY THE ACTION OF A LIQUID SOLVENT APPLIED THERETO.
Claim 2
Dependent Claim 129 words
THE PROCESS OF PRODUCING A PATTERN OF METALLIC AREAS UPON A SUPPORTING BASE MATERIAL, COMPRISING THE STEPS OF APPLYING A LAYER OF A SOLUBLE SUBSTANCE HAVING A CONFIGURATION WHICH IS THE NEGATIVE OF THE DESIRED PATTERN, DEPOSITING BY VAPOR DEPOSITION OF A LAYER OF SILICON MONOXIDE ON THE SURFACE OF THE BASE MATERIAL, RETAINING IN VACUO SAID SUPPORTING BASE MATERIAL HAVING THEREON SAID AFOREMENTIONED LAYER OF SILICON MONOXIDE TO PREVENT OXIDATION OF SAID SILICON MONOXIDE, DEPOSITING BY VAPOR DEPOSITION UPON THE SECOND MENTIONED LAYER OF AN OVERALL LAYER OF THE DESIRED METAL, COVERING THE ENTIRE LAYERED AREA WITH A SECOND LAYER OF SILICON MONOXIDE, AND REMOVING THE LAYER OF SOLUBLE SUBSTANCE AND THOSE PORTIONS OF METAL OVERLYING SAID SOLUBLE SUBSTANCE BY THE ACTION OF A LIQUID SOLVENT APPLIED THERETO.

References Cited (Backward Citations)

US2139640A Cited
US2107784A Cited
US2304182A Cited
US2447836A Cited
US2373639A Cited
US2441960A Cited
US2386876A Cited
US2456899A Cited
US2628921A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1959-05-29 1959-11-28 1960-05-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1963-05-29 1963-11-28 1964-05-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1967-05-29 1967-11-28 1968-05-29 $7700.00 Window Closed / Lapsed

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