Light for use in activating light-activated materials, the light having a plurality of light emitting single chip arrays

Claim 2

1 . A light for activating a light-activated material comprising: a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, a plurality of light emitting single chip arrays, said single chip arrays being mounted to said heat sink, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “n”, where n is greater than or equal to 2, each of said light emitting single chip arrays emitting light of a certain peak wavelength λ i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “λ 1 ”, a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “λ n ”, the wavelength of λ 1 being less than λ n , each of said light emitting single chip arrays peak wavelengths λ i being greater than or equal to λ 1 and less than or equal to λ n , λ 1 and λ n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays, said peak wavelength limits λ 1 and λ n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ 1 . . . λ n , each of said light emitting single chip arrays emitting light of an intensity I i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “I 1 ”, a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “I n ”, the intensity of I 1 being less than or equal to the intensity of I n and the intensity of light emitted by a particular chip “i” being designated I 1 where I i is greater than or equal to I 1 and where I i is less than or equal to I n ; wherein the intensity of I i of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ i .

Claim 3

2 . A light for activating a light-activated material as recited in claim 1 wherein said single chip arrays are directly mounted to said heat sink.

Claim 4

3 . A light for activating a light-activated material as recited in claim 1 wherein said at least one of said single chip arrays is affixed to a primary heat sink and said primary heat sink is mounted to said aforementioned heat sink to achieve mounting of said single chip array to said aforementioned heat sink.

Claim 5

4 . A light for activating a light-activated material as recited in claim 1 wherein said plurality of light emitting single chip arrays includes not less than 3 single chip arrays.

Claim 6

5 . A light for activating a light-activated material as recited in claim 1 wherein each of said single chip arrays includes a volume of semiconductor material located on a substrate, and at least one electrode strip in contact with said semiconductor material.

Claim 7

6 . A light for activating a light-activated material as recited in claim 5 wherein at least one of said single chip arrays has an electrode strip along at least one of its sides.

Claim 8

7 . A light for activating a light-activated material as recited in claim 1 wherein at least one of said single chip arrays has an electrode on it in a comb configuration.

Claim 9

8 . A light for activating a light-activated material as recited in claim 1 wherein at least one of said single chip arrays has a size a×b where both “a” and “b” are not less than 300 micrometers.

Claim 10

9 . A light for activating a light-activated material as recited in claim 1 wherein at least one of said single chip arrays has a size a×b and wherein at least one of “a” and “b” is not less than 1 millimeter.

Claim 11

10 . A light for activating a light-activated material as recited in claim 1 wherein at least one of said single chip arrays has a size a×b and wherein both of “a” and “b” are each more than 1 millimeter.

Claim 12

11 . A light for activating a light-activated material as recited in claim 1 wherein at least one of said single chip arrays includes an electrode strip arranged in a row and column formation

Claim 13

12 . A light for activating a light-activated material as recited in claim 1 wherein I i for at least one of said plurality of light emitting single chip arrays is at least 40 mW.

Claim 14

13 . A light for activating a light-activated material as recited in claim 1 wherein I 1 is less than I n .

Claim 15

14 . A light for activating a light-activated material as recited in claim 1 wherein I 1 is greater than I n .

Claim 16

15 . A light for activating a light-activated material as recited in claim 1 wherein I i for at least one of said plurality of light emitting single chip arrays is at least 40 mW.

Claim 17

16 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 200 nm.

Claim 18

17 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 300 nm.

Claim 19

18 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 350 nm.

Claim 20

19 . A light for activating a light-activated material as recited in claim 1 wherein λ n is less than or equal to 455 nm.

Claim 21

20 . A light for activating a light-activated material as recited in claim 1 wherein λ n is less than or equal to 460 nm.

Claim 22

21 . A light for activating a light-activated material as recited in claim 1 wherein λ n is less than or equal to 480 nm.

Claim 23

22 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 200 nm and λ n is less than or equal to 455 nm.

Claim 24

23 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 300 nm and λ n is less than or equal to 455 nm.

Claim 25

24 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 350 nm and λ n is less than or equal to 455 nm.

Claim 26

25 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 300 nm and λ n is less than or equal to 455 nm and wherein I i is greater than or equal to 40 mW for said plurality of light emitting single chip arrays.

Claim 27

26 . A light for activating a light-activated material as recited in claim 1 wherein λ 1 is greater than or equal to 200 nm and λ n is less than or equal to 480 nm and wherein I i is greater than or equal to 40 mW for said plurality of light emitting single chip arrays.

Claim 28

27 . A light for activating light-activated materials as recited in claim 1 wherein at least one of said light emitting single chip arrays are selected from the group consisting of light emitting diode chip arrays and laser chip arrays.

Claim 29

28 . A light for activating light-activated materials as recited in claim 1 further comprising: at least one cover, said cover serving to protect at least one of said light emitting single chip arrays from damage.

Claim 30

29 . A light for activating a light-activated material comprising: a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink exhibiting thermal conductivity, a plurality of light emitting single chip arrays being mounted to said heat sink, each of said single chip arrays having a substrate and a volume of semiconductor material on said substrate, each of said single chip arrays having an electrode strip along at least one of its sides, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “n”, where n is greater than or equal to 2, each of said light emitting single chip arrays emitting light of a certain peak wavelength λ i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “λ 1 ”, a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “λ n ”, the wavelength of λ 1 being less than λ n , each of said light emitting single chip arrays peak wavelengths λ i being greater than or equal to λ 1 and less than or equal to λ n , λ 1 and λ n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays, said peak wavelength limits λ 1 and λ n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ 1 . . . λ n , each of said light emitting single chip arrays emitting light of an intensity I i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “I 1 ”, a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “I n ”, the intensity of I 1 being less than or equal to the intensity of I n , and the intensity of light emitted by a particular chip “i” being designated I i where I i is greater than or equal to I 1 and where I i is less than or equal to I n ; wherein the intensity of I i of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ i ; wherein I i for at least one of said plurality of light emitting single chip arrays is at least 40 mW; and wherein λ 1 is greater than or equal to 200 nm.

Claim 31

29 . A light for activating a light-activated material comprising: a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink exhibiting thermal conductivity, a plurality of light emitting single chip arrays being mounted to said heat sink, each of said single chip arrays having a substrate and a volume of semiconductor material on said substrate, each of said single chip arrays having an electrode strip along at least one of its sides, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “n”, where n is greater than or equal to 2, each of said light emitting single chip arrays emitting light of a certain peak wavelength λ i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “λ 1 ”, a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “λ n ”, the wavelength of λ 1 being less than λ n , each of said light emitting single chip arrays peak wavelengths λ i being greater than or equal to λ 1 and less than or equal to λ n , λ 1 and λ n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays, said peak wavelength limits λ 1 and λ n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ 1 . . . λ n , each of said light emitting single chip arrays emitting light of an intensity I i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “I 1 ”, a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “I n ”, the intensity of I 1 being less than or equal to the intensity of I n , and the intensity of light emitted by a particular chip “i” being designated I i where I i is greater than or equal to I 1 and where I i is less than or equal to I n ; wherein the intensity of I i of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ i ; wherein I i for at least one of said plurality of light emitting single chip arrays is at least 40 mW; and wherein λ 1 is greater than or equal to 200 nm.

Claim 32

30 . A light for activating a light-activated material as recited in claim 29 wherein said single chip arrays are directly mounted to said heat sink.

Claim 33

31 . A light for activating a light-activated material as recited in claim 29 wherein said at least one of said single chip arrays is affixed to a primary heat sink and said primary heat sink is mounted to said aforementioned heat sink to achieve mounting of said single chip array to said aforementioned heat sink.

Claim 34

32 . A light for activating a light-activated material as recited in claim 29 wherein said plurality of light emitting single chip arrays includes not less than 3 single chip arrays.

Claim 35

33 . A light for activating a light-activated material as recited in claim 29 wherein each of said single chip arrays includes a volume of semiconductor material located on a substrate, and at least one electrode strip in contact with said semiconductor material.

Claim 36

34 . A light for activating a light-activated material as recited in claim 33 wherein at least one of said single chip arrays has an electrode strip along at least one of its sides.

Claim 37

35 . A light for activating a light-activated material as recited in claim 33 wherein at least one of said single chip arrays has an electrode on it in a comb configuration.

Claim 38

36 . A light for activating a light-activated material as recited in claim 33 wherein at least one of said single chip arrays has a size a×b where both “a” and “b” are not less than 300 micrometers.

Claim 39

37 . A light for activating a light-activated material as recited in claim 33 wherein at least one of said single chip arrays has a size a×b and wherein at least one of “a” and “b” is not less than 1 millimeter.

Claim 40

38 . A light for activating a light-activated material as recited in claim 33 wherein at least one of said single chip arrays has a size a×b and wherein both of “a” and “b” are each more than 1 millimeter.

Claim 41

39 . A light for activating a light-activated material as recited in claim 33 wherein at least one of said single chip arrays includes an electrode strip arranged in a row and column formation.

Claim 42

40 . A light for activating a light-activated material as recited in claim 33 wherein I i for at least one of said plurality of light emitting single chip arrays is at least 40 mW.

Claim 43

41 . A light for activating a light-activated material as recited in claim 33 wherein I 1 is less than I n .

Claim 44

42 . A light for activating a light-activated material as recited in claim 33 wherein I 1 is greater than I n .

Claim 45

43 . A light for activating a light-activated material as recited in claim 33 wherein I i for at least one of said plurality of light emitting single chip arrays is at least 40 mW.

Claim 46

44 . A light for activating a light-activated material as recited in claim 33 wherein λ 1 is greater than or equal to 200 nm.

Claim 47

45 . A light for activating a light-activated material as recited in claim 33 wherein λ 1 is greater than or equal to 300 nm.

Claim 48

46 . A light for activating a light-activated material as recited in claim 33 wherein λ 1 is greater than or equal to 350 nm.

Claim 49

47 . A light for activating a light-activated material as recited in claim 33 wherein λ n is less than or equal to 455 nm.

Claim 50

48 . A light for activating a light-activated material as recited in claim 33 wherein λ n is less than or equal to 460 nm.

Claim 51

49 . A light for activating a light-activated material as recited in claim 33 wherein λ n is less than or equal to 480 nm.

Claim 52

50 . A light for activating a light-activated material as recited in claim 33 wherein λ 1 is greater than or equal to 200 nm and λ n is less than or equal to 455 nm.

Claim 53

51 . A light for activating a light-activated material as recited in claim 33 wherein λ 1 is greater than or equal to 300 nm and λ n is less than or equal to 460 nm.

Claim 54

52 . A light for activating a light-activated material as recited in claim 33 wherein λ 1 is greater than or equal to 350 nm and λ n is less than or equal to 460 nm.

Claim 55

53 . A light for activating a light-activated material as recited in claim 33 wherein λ 1 is greater than or equal to 300 nm and λ n is less than or equal to 460 nm and wherein I i is greater than or equal to 40 mW for said plurality of light emitting single chip arrays.

Claim 56

54 . A light for activating light-activated materials as recited in claim 33 further comprising: at least one cover, said cover serving to protect at least one of said light emitting single chip arrays from damage.

Claim 57

55 . A light for activating light-activated materials as recited in claim 33 further comprising: a well in said heat sink, at least one of said chips being mounted in said well.

Claim 58

56 . A light for activating light-activated materials as recited in claim 55 wherein said well has light reflective walls.

Claim 59

57 . A light for activating light-activated materials as recited in claim 29 further comprising: a primary heat sink, a well in said heat sink, at least one of said chips being located in said well, and said primary heat sink being mounted to said aforementioned heat sink.

Claim 60

58 . A light for activating a light-activated material comprising: a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, at least one well on said heat sink, said well having a bottom, said well having a wall, a plurality of light emitting single chip arrays, at least one of said single chip arrays being mounted in said well, said well wall serving to reflect light from said chip array that strikes it in a useful direction, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “n”, where n is greater than or equal to 2, each of said light emitting single chip arrays emitting light of a certain peak wavelength λ i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “λ 1 ”, a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “λ n ”, said light emitting single chip arrays being selected so that the wavelength of λ 1 is measurably less than λ n , each of said light emitting single chip arrays peak wavelengths λ i being greater than or equal to λ 1 and less than or equal to λ n , λ 1 and λ n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays, said peak wavelength limits λ 1 and λ n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ 1 . . . λ n , each of said light emitting single chip arrays emitting light of an intensity I i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “I 1 ”, a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “I n ”, the intensity of I 1 being less than or equal to the intensity of I n , and the intensity of light emitted by a particular chip “i” being designated I i where I i is greater than or equal to I 1 and where I i is less than or equal to I n ; wherein the intensity of I i of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ i .

Claim 61

58 . A light for activating a light-activated material comprising: a light module capable of emitting light useful in activating a light-activated material, a heat sink in said light module, said heat sink having heat conductance qualities, at least one well on said heat sink, said well having a bottom, said well having a wall, a plurality of light emitting single chip arrays, at least one of said single chip arrays being mounted in said well, said well wall serving to reflect light from said chip array that strikes it in a useful direction, at least some of said light emitting single chip arrays being capable of emitting light of a wavelength that is useful in activating a light activated material, the actual number of said plurality of light emitting single chip arrays being a positive integer “n”, where n is greater than or equal to 2, each of said light emitting single chip arrays emitting light of a certain peak wavelength λ i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest peak wavelength light emission of said plurality of light emitting single chip arrays, said lowest peak wavelength light emission being referred to as “λ 1 ”, a last of said light emitting single chip arrays having the highest peak wavelength light emission of said plurality of light emitting single chip arrays, said highest peak wavelength light emission being referred to as “λ n ”, said light emitting single chip arrays being selected so that the wavelength of λ 1 is measurably less than λ n , each of said light emitting single chip arrays peak wavelengths λ i being greater than or equal to λ 1 and less than or equal to λ n , λ 1 and λ n serving to define the lower and upper wavelength limits output by said plurality of light emitting single chip arrays, said peak wavelength limits λ 1 and λ n being selected to define a wide light spectrum profile capable of activating various light-activated materials having sensitivities to various light wavelengths in the range of λ 1 . . . λ n , each of said light emitting single chip arrays emitting light of an intensity I i , where “i” is an integer between 1 and n, a first of said light emitting single chip arrays having the lowest intensity of light emission of said plurality of light emitting single chip arrays, said lowest intensity light emission being referred to as “I 1 ”, a last of said light emitting single chip arrays having the highest intensity of light emission of said plurality of light emitting single chip arrays, said highest intensity light emission being referred to as “I n ”, the intensity of I 1 being less than or equal to the intensity of I n , and the intensity of light emitted by a particular chip “i” being designated I i where I i is greater than or equal to I 1 and where I i is less than or equal to I n ; wherein the intensity of I i of at least some of said plurality of light emitting single chip arrays is sufficient to cause activation of a light-activated material sensitive to activation by light of the wavelength λ i .

Claim 62

59 . A light for activating a light-activated material as recited in claim 58 wherein λ 1 is greater than or equal to 300 nm and λ n is less than or equal to 460 nm and wherein I i is greater than or equal to 40 mW for each of said plurality of light emitting single chip arrays.

Claim 63

60 . A light as recited in claim 58 further comprising: a secondary heat sink, said primary heat sink being affixed to said secondary heat sink, said primary heat sink serving to draw heat away from at least one of said chips, said secondary heat sink serving to draw heat away from said primary heat sink, and said secondary heat sink serving to dissipate said heat.