Manufacturing method of high-density random access memory

Abstract

Abstract A manufacturing method of high-density random access memory comprises of: (1) on semiconductor wafer forming dielectric; (2) planarizing the above dielectric; (3) by photolithography and etch technology etching the above dielectric to expose the above semiconductor wafer to form hole; (4) forming one polysilicon; (5) forming dot silicon particles; (6) by ion implant technology performing oblique oxygen implantation to implant oxygen ion into the above silicon particles, making the above silicon particles become oxygen-containing region; (7) in high temperature environment performing annealing process to the above oxygen-containing region, so as to convert the above oxygen-containing region to silicon oxide; (8) with the above silicon oxide as etch mask, by etch technology etching the above first polysilicon to make the above first polysilicon generate trench; (9) removing the above silicon oxide.

Inventors

• 👤 Horng-Huei Tzeng

Bibliographic Details