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Heat sink contact layer of solder - providing direct contact between semiconductor substrate and heat sink

Assignee: Drukker Int Bv
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Filing: 1987-04-24
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Granted: —
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Expires: 2007-04-24
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Abstract

Abstract The heat sink (1) is a block of copper with a thin e.g. 2000 Angstroms, platinum surface layer (2). A layer (3) of a gold and tin alloy is applied by cathodic sputtering. The ratio between the gold and tin content is 2 to 31. A layer (4) of pure tin is then applied followed by a final layer (5) of gold and tin, similar to the first (3). The sputtering operations are performed at a power of 500 watts at a pressure of between 1 and 10 microbars. The total thickness of the three sputtered layers is about 5 microns. When the layers have been applied, the heat sink is heated to a temp. of 278 deg. C to form a eutectic solder combination.

Inventors

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Bibliographic Details

Application Number —
Jurisdiction NL
Data Source google_patents
Last Synchronized 2026-11-06 20:20
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/20; H10W70/24; H10W40/00; H10W40/20; H10W40/25; H10W40/255

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