Formation of outside inclined mirror of semiconductor laser

Abstract

Abstract PURPOSE:To make it possible to form a desired angle of inclination with good reproducibility and with good uniformity by a method wherein a groove processing consists of a fine groove processing for forming a vertical end surface and a fine groove processing, which makes the desired angle of inclination with a substrate for forming an outside inclined end surface, and when two fine grooves cross each other at a bottom part, the region pinched by the two grooves is removed from the substrate. CONSTITUTION:In a resist forming process, a vertical groove 15 is filled with a resist material. Then, a reactive ion beam etching is performed by the same method as a method wherein an etching is performed. At this time, as a substrate 11 is arranged in such a way as to make an angle of 45 deg. to a reactive plasma shower 17, an oblique etching is performed using a resist pattern 16 as a mask to form an inclined groove 18. At this time, the groove 15 and the groove 18 cross each other at a bottom part 19. Accordingly, a part 25 surrounded with both of the fine grooves 15 and 18 is separated from the substrate 11 when the resist mask 16 is removed and such an asymmetrical groove as to have a vertical sidewall 21 and an inclined surface 22 can be obtained.

Inventors

• 👤 Kiyoshi Asakawa
• 👤 Nobukazu Takado
• 👤 Tsunao Yuasa

Bibliographic Details