Semiconductor laser array element and manufacture thereof

Abstract

Abstract PURPOSE:To grow a uniform and flat active layer and to obtain a stable optical mode by forming a second groove row disposed in a different direction on both sides of a first groove row arranged at a predetermined period. CONSTITUTION:An N-type Al0.1Ga0.9As first current narrowing layer 102 and an N-type GaAs surface protective layer 103 are sequentially grown on a P-type GaAs substrate 101. A groove 120 of 5mum of period is formed by photolithography technique and etching technique on the substrate. Grooves 120 of different direction from a resonator direction of the groove 120 are formed at both sides. Further, a P-type Al0.4Ga0.5As clad layer 104, an Al0.1Ga0.9As active layer 105, an N-type Al0.4Ga0.6As clad layer 106 and an N-type GaAs contact layer 107 are further continuously grown by LEP thereon. In this case, since the grooves 120, 121 are presented on the whole substrate, the growth of the layer 104 can be uniformly performed at any part when the width, depth and pitch of the grooves 121 are controlled.

Inventors

• 👤 Hiroyuki Hosobane
• 👤 Kaneki Matsui
• 👤 Mototaka Tanetani
• 👤 Akihiro Matsumoto

Bibliographic Details