Semiconductor laser

Abstract

Abstract PURPOSE:To facilitate the manufacture of the titled device and thus facilitate the electric isolation of active media by a method wherein the optical coupling between active wave guides by the variation of the shape of the active wave guide. CONSTITUTION:A wave guide layer 2 and active layers 1a-1c are formed on a semiconductor substrate crystal 3, and the active layers 1a-1c are constructed in rectangles and form the active wave guides together with the wave guide 2. Electrodes 5 and 6 injecting currents to the active wave guides are provided, and resonator end surfaces 7 and 8 reflecting lights guided to the active layers 1a-1c and the wave guide layer 2 are provided. A diffraction grating 9 is formed on the side surface of each active layer 1a-1c, resulting in the shape with parallel lines cut in respective opposing surfaces. Laser oscillation is caused from the layers 1a-1c by the current injected through the electrodes of such a structure, and then a part of light is picked up into the active wave guides through the diffraction gratings 9 at the side surfaces of the respective layers 1a-1c, which light is then propagated through the wave guides. Accordingly, the electric isolation of the active media is facilitated by the facilitation of the manufacture of the titled device.

Inventors

• 👤 Kazunori Moriki
• 👤 森木　一紀
• 👤 Jun Osawa
• 👤 大沢　潤
• 👤 Kenji Ikeda
• 👤 健志 池田
• 👤 Wataru Suzaki
• 👤 須崎　渉

Bibliographic Details