Construction of compound semiconductor

Abstract

Abstract PURPOSE: To improve the performance of a compound semiconductor material composed of a cation component of Ga, Al, or In and As or Sb by stabilizing the surface of the material by coating the clean crystal interface of the material with a Fermi level binding control layer which is composed of a compound of the cation component and a specific element and has a conductible thickness and a surface layer composed of a nonmetallic material. CONSTITUTION: After the surface 2 of a semiconductor substrate 1 composed of a GaAs crystal is cleaned by heating the crystal 1 for 30 seconds at 700 deg.C while the surface 2 of the crystal 1 is exposed to an H1 S atmosphere containing no oxygen, a gallium sulfide coating film 3 having a thickness which is about that of a monomolecular layer. Then a silicon oxide (CaF2 , NaS, ZnS, GaP, SaSe, or polyimide) dielectric coating film 4 having a thickness of 1-1,000nm is formed on the surface of the structure coating GaS (Se or Te is also effective instead of S) by the low-temperature plasma excitation chemical vapor deposition.

Inventors

• 👤 Bikusuraa Fuaaraa Arei
• 👤 Roorensu Furiiofu Jiyon
• 👤 Danieru Kaakunaa Piiitaa
• 👤 Kuraaku Waaren Aren
• 👤 Makufuaason Utsudoru Jierii

Bibliographic Details