Contact-type equi-magnification image sensor

Abstract

Abstract PURPOSE:To decrease manufacturing processes in number and also a product cost by a method wherein a photodetecting section and a drive circuit section both formed out of polycrystalline silicon are provided onto the same substrate. CONSTITUTION:A polycrystalline silicon layer (i-type semiconductor layer) 16 is deposited on an insulating substrate 4, a P-type diffusion layer 17 and an N-type diffusion layer 18 are formed thereon so as to leave the i-type semiconductor layer 16 at the central section, and then electrodes 13 and 14 are attached to the P-type diffusion layer 17 and the N-type diffusion layer 18 respectively. Next, a drive circuit section 2 is formed, which is composed of a C-MOS transistor that comprises a gate oxide film (polysilicon gate layer) 212, an interlaminar insulating film 212, a protective film 213, a gate electrode G, a source electrode S, and a drain electrode D. By these processes, an aggregate (photodetecting section 1) of a photoelectric conversion element and an aggregate (drive circuit section 2) of a TFT are constructed on the same substrate 4.

Inventors

• 👤 Masaki Hiroi
• 👤 Masumitsu Ino
• 👤 Taketo Osada
• 👤 Masumi Shimada

Bibliographic Details