Semiconductor light-emitting device

Abstract

Abstract PURPOSE: To realize a high blue light emission efficiency with a hetero-junction by a method wherein the forbidden band with of a p-type crystal layer is selected to be larger than that of an n-type crystal layer and a transition region in which the forbidden band width is gradually getting larger than that of the n-type crystal layer is provided and the p-type layer is composed of at least two layers. CONSTITUTION: An n-type ZnSe layer 2 is made to grow on an Si-doped GaAs substrate 1 by an MOCVD method and successively a p-type ZnS 0.1 Se 0.9 layer 3 is made to grow by MOCVD. An n-side electrode 4 and a p-side electrode 5 are composed of an Au-Ge film and an Au film respectively. Zinc dimethylate, selenium dimethylate and sulphur diethylate are used as crystal growth materials, hydrogen chloride is used as a donor dopant and lithium tributylate (t-BuLi) is used as an acceptor dopant. In this device, the forbidden band width of the p-type crystal layer is larger than that of the n-type crystal layer. Therefore, when a forward bias is applied, positive hole injection from the p-type crystal layer to the n-type crystal layer is governing. With this constitution, a high light emission efficiency can be obtained. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Atsushi Kamata
• 👤 Tsutomu Uemoto
• 👤 Keijiro Hirahara
• 👤 Hiroshi Mihashi

Bibliographic Details