Semiconductor device

Abstract

Abstract PURPOSE: To provide sufficient electric characteristics and adhesion, by providing a semiconductor layer comprising polycrystalline silicon on a substrate, including hydrogen and fluorine in the vicinity of the grain boundary of the polycrystalline silicon, and distributing either of the concentration of the hydrogen or the concentration of the fluorine in the direction of the thickness of the semiconductor layer. CONSTITUTION: Hydrogen and fluorine are included in a semiconductor at the same time. The concentration of the hydrogen is distributed in the direction of a layer. As the method for including the hydrogen and the fluorine in the vicinity of the grain boundary of a polycrystalline thin film, heat treatment is performed in a plasma atmosphere of a gas, whose main component is the hydrogen or the fluorine, after the formation of the polycrystalline silicon thin film. Namely, plasma is yielded at substrate temperature of 100∼500°C, gas pressure of 10 -5 Torr∼10Torr, high frequency power of 10 -3 ∼10 -2 W/m 2 and high frequency of 5∼50GHz. At this time, the hydrogen and the fluorine are mainly used as the gas. Inactive gas such as Ar, He, Ne and the like can be added. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Shigeru Shirai

Bibliographic Details