Image reader and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a low-cost image reader, a read rate of which is increased sufficiently and which is mounted easily, by forming a signal transfer section, including a single crystal semiconductor layer shaped onto a nucleation surface, which is formed onto an insulating base body, consists of a material of a different kind and has enough fine size, and shaping a sensor section onto said signal transfer section. CONSTITUTION:A signal transfer section 32 is formed, including a single crystal semiconductor layer 8 shaped onto a nucleation surface, which is formed onto an insulating base body 4, is composed of a material of a different kind and has sufficiently fine size, and a sensor section 50 is formed onto said signal transfer section 32. An insulating layer 5 having small nucleation density is shaped onto the base body 4, N<+> regions 22, 24, 26 are formed to the single crystal semiconductor layer 8 such as P-type one grown onto the layer 5 through a selective nucleation method, and a thermal oxide film 28 and a gate electrode 30 are formed, thus shaping the signal transfer section 32 such as a MOS type switch element 32. An auxiliary electrode 58 an insulating layer 60, a photoconductive layer 34 made up of amorphous silicon and an N<+> layer 36 for an ohmic contact are formed onto the switch element 32, and electrodes 42, 44, 46 are shaped, thus constituting the photoconductivity type sensor section 50 and a capacitor 52 for charge storage in the signal transfer section.

Inventors

• 👤 Satoru Itabashi

Bibliographic Details