Semiconductor device

Abstract

Abstract PURPOSE: To prevent reaction between a side wall and metal and to prevent short circuits between source/drain regions and a gate electrodes, in a semiconductor device having a self-aligned silicide structure, in which the insulating film side wall is provided on the gate electrode, by a constitution, wherein Si is not included in the insulating film side wall. CONSTITUTION: On a P-type semiconductor substrate 201, an element isolating oxide film 202, a gate oxide film 203, a gate electrode 204 and a low- concentration N-type impurity diffused layer 205 are formed. An Al 2 O 3 film 209 is formed by a chemical vapor growth method. Then the entire surface is etched with reactive ions, and a side wall 206 of Al 2 O 3 is formed. Metal silicide 208 is formed only on the gate electrode 204 and source/drain diffused layers 207. Since Si is not included in the side wall as described above, Si and the metal are not reacted when the metal silicide is formed, and the metal silicide is not formed on the side wall. A semiconductor layer having an excellent self-aligned silicide structure, wherein the gate electrode and the source/ drain diffused layers are sufficiently isolated, is obtained. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Makio Goto

Bibliographic Details