Semiconductor laser

Abstract

Abstract PURPOSE:To obtain an excellent crystalline property by causing a barrier layer to have a multilayer structure and by making a forbidden band width which is equivalent with respect to the film thickness direction of the barrier layer larger as its band width approaches an active layer. CONSTITUTION:In an n-side barrier layer 3 and a p-side barrier 5 which are composed of so called supper grating where GaAs and AlAs are alternately laminated, an equivalent, triangular, potential barrier where an equivalent forbidden ban width becomes wide as its band width approaches an active later 4 is formed. Since there is electric rectification so that when carriers proceed towards the active layer 4, electric resistance is low, yet when the carriers separate from the active layer 4, electric resistance becomes high, a phenomenon where the carriers escape from the active layer 4, that is, a carrier-overflow can be suppressed to improve temperature characteristics of an oscillation threshold current. This approach enables this semiconductor laser to have excellent temperature characteristics of the oscillation threshold current and to be highly efficient to perform optical confinement and further, to have superior crystalline property in the active layer or barrier layer.

Inventors

• 👤 Mitsunori Sugimoto

Bibliographic Details