Semiconductor quantum well laser

Abstract

Abstract PURPOSE:To facilitate the design and manufacture of a semiconductor quantum well layer by providing a band structure so that the problem of Auger non-radiative recombination will be reduced and by making the oscillation threshold current value low and the characteristic temperature high and also by forming a quantum well layer, thereby laminating two kinds of binary semiconductors alternately while controlling only their film thickness. CONSTITUTION:A semiconductor quantum well layer 15 is composed of a multi layer laminating structure consisting of the first binary compound semiconductor having a semiconductor substrate 11 and a grating inconsistent degree of +1% or more as well as the second binary compound semiconductor having the semiconductor substrate 11 and the grating inconsistent degree of -1% or more. And in a state where the compound semiconductor of an average composition in the multi layer laminating structure has the semiconductor substrate 11 and the grating inconsistent degree within 0.3% and its compound semiconductor undergoes grating deformation under the influence of the semiconductor substrate 11, the handicap of the first binary compound semiconductor is smaller than that of the second binary compound semiconductor and also the valence sub-band of a base order in the quantum well layer depends on a heavy positive hole band. A long wavelength semiconductor quantum well laser which is easily manufactured and has a low oscillation threshold current value as well as a high characteristic temperature is obtained in this way.

Inventors

• 👤 Kenichi Nishi
• 👤 Yuichi Ide
• 👤 Takayoshi Anami
• 👤 Kentarou Onabe

Bibliographic Details