Semiconductor laser device

Abstract

Abstract PURPOSE:To radiate a laser beam having a small angle of deflection by a method wherein an active layer composed of an oscillation layer, a connection region and a window region is formed to be continuously smooth from a recessed and curved shape to a planar shape. CONSTITUTION:An N-GaAs current-blocking layer 11, a P-GaAlAs clad layer 12, a GaAs or GaAlAs active layer 13, an N-GaAlAs clad layer 14 and an N-GaAs cap layer 15 are laminated in succession on a substrate 10. The active layer 13 is formed by reflecting a stripe shape of the current-blocking layer 11. That is to say, the active layer 13 is bent toward the lower-layer side in the center of a groove part in an oscillation region 18; its layer thickness is thick; the layer is formed to be a planar shape and its layer thickness is formed to be thin in a window region 17. In a connection region 19, the active layer 13 is formed to be continuous gradually from a curved shape to the planar shape and its film thickness is formed to be gradually thin.

Inventors

• 👤 Toshio Hata

Bibliographic Details