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JPS6466980A Expired / Lapsed JP ⏱️ 0.0 years remaining

Superconducting transistor

Assignee: Seiko Epson Corp
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Filing: 1987-09-08
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Granted: —
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Expires: 2007-09-08
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Abstract

Abstract PURPOSE:To eliminate heat build-up and enable a large current to be taken out without interrupting high integration by providing a first electrode on a substrate, a superconductor layer on it, and then a second electrode. CONSTITUTION:The first conductive electrode 9 consisting of Al, a Y-Ba-Cu-O system superconductive layer 10, and the second electrode 11 consisting of Al are provided on a glass substrate 8. Then, an insulation film between layers 12 consisting of SiO2 is formed on it. A source electrode 13 and drain electrode 14 consisting of Al are connected to a superconductive layer 10. Flow of current exceeding threshold value of the superconductive layer 10 from the first electrode 9 to second electrode 11 allows the channel are to be in a highly insulated status with large resistance and current flowing between the electrodes 9 and 11 controls current flowing between the source and drain electrodes 13 and 14.

Inventors

  • 👤 Takashi Sato

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 04:11
CPC Classifications
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