Three-electrode sputtering gun

Abstract

Abstract PURPOSE:To uniformize electric fields over the whole surface of a target and to uniformize the thickness of a deposit film, by dividing a filament of a three-electrode sputtering gun into plural parts and controlling electric fields at both ends so that they are weaker than the electric field in the central part. CONSTITUTION:In a vacuum vessel 1, a semiconductor water (unillustrated) on which a film is to be formed by deposition is disposed as a cathode. Further, a target 2 is disposed opposite to the above wafer in close vicinity to each other. Then, magnets 3 are disposed between the above semiconductor wafer and the target 2 to generate magnetic fields H along the surface of the target 2 and, simultaneously, anodes 4 and filaments 5 are disposed, by which electric fields (e) orthogonal to the above electric fields H are generated. By the above procedure, the target 2 is sputtered to carry out the deposition of film. In a three-electrode sputtering gun of the above constitution, the above filament 5 is divided, e.g., into three, and the sizes of the filaments 5 on both sized are regulated so that they are about twice the size of the filament 5 in the central part, respectively. By this method, the electric fields (e) on both sides are controlled so that they are weaker than the electric field (e) in the central part, respectively, by which the electric fields (e) can be uniformized over the whole surface of the target 2.

Inventors

• 👤 Yoshiaki Tanimoto

Bibliographic Details