Semiconductor device and its manufacture

Abstract

Abstract PURPOSE:To improve reliability and production yield, by using a triple-layer film consisting of an SiO2 film, an SOG film, an SiO2 film or a phosphorus glass film so as to form insulation films serving as metallic wirings and by performing a plurality of processes of coating and heat treatment to form the SOG film. CONSTITUTION:An SiO2 film 16 is formed by a CVD method in which SiH4 and oxygen are used as reaction gases. Next a rotary coating method is used to control the speed of rotation and to form an SOG film 17. Heat treatment is performed at 800 deg.C for 20min., in a nitrogen atmosphere and then the rotary coating method is used again to control the speed of rotation and to superpose the SOG films 17. Heat treatment is performed further at 800 deg.C for 20min., in the nitrogen atmosphere. Next a phosphorus glass 18 is formed at 430 deg.C by a CVD method in which SiH4, O2, and phosphine are used as reaction gases. A contact hole 19 is formed and an ion implantation method is used to introduce phosphorus into a substrate 11. Heat treatment of the substrate is performed at 850 deg.C for 20min., to form an n<+> region 20. Subsequently a sputtering method is used to form an Al film 21 and to perform its patterning process.

Inventors

• 👤 Itaru Ogiwara
• 👤 Shinpei Iijima
• 👤 Yoshifumi Kawamoto

Bibliographic Details